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HDAE60F60G
Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDAE60F60G can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
High Breakdown Voltage
High Speed Switching
Dec 2015
VRRM = 600 V
IF = 60A
trr = 39nS
TO-247-2L
C
A
Cathode
Anode
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
IF(AV)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectifier Forward Current
IFSM Non-Rectifier Peak Surge Current @8.3ms
TJ, TSTG Operating and Storage Temperature Range
Value
600
60
600
-55 to +150
Unit
V
A
A
Electrical Characteristics
Symbol
VBR
VF
IR
trr
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Test Conditions
Min Typ Max Unit
IR = 50uA
600 -- -- V
IF = 60A, TC = 25
-- 1.2 1.5
V
VR = 600V, TC = 25
--
-- 50 uA
IF = 1A, di/dt = 200A/μs
--
39
--
ns
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
Typ.
--
Max.
0.8
Unit
/W
SEMIHOW REV.A1,.Dec 2015

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Typical Characteristics
70
60
50
40
30
20
10
0
25 50 75 100 125 150
CASE TEMPERATURE [oC]
Figure 1. Forward Current Derating Curve
100000
10000
1000
100
10
T =125oC
A
TA=75oC
TA=25oC
1
0 100 200 300 400 500 600
REVERSE VOLTAGE [V]
Figure 3. Typical Reverse Characteristics
100
T =125oC
TA=75oC
10 A
TA=25oC
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE [V]
Figure 2. Typical Forward Characterisitics
1000
f=1MHz
800
600
400
200
0
1 10 100
REVERSE VOLTAGE [V]
Figure 4. Typical Junction Capacitance
SEMIHOW REV.A1,.Dec 2015

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Package Dimension
TO-247-2L
SEMIHOW REV.A1,.Dec 2015