QM2605S.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 QM2605S 데이타시트 다운로드

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QM2605S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM2605S is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
The QM2605S meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BVDSS
20V
-20V
RDSON
42m
130m
Applications
ID
4.6A
-2.8A
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Dual SOP8 Pin Configuration
D1 D1D2 D2
Absolute Maximum Ratings
S1 G1S2 G2
Symbol
VDS
VGS
ID@TA=25
ID@TA=100
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-Channel P-Channel
20 -20
±8 ±8
4.6 -2.8
3.7 -2.3
18.4 -11.2
1.5 1.5
-55 to 150 -55 to 150
-55 to 150 -55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
85
60
Unit
/W
/W
Rev A.02 D052711

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QM2605S
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=4.5V , ID=4A
VGS=2.5V , ID=2A
VGS=1.8V , ID=1.5A
VGS=VDS , ID =250uA
VDS=16V , VGS=0V , TJ=25
VDS=16V , VGS=0V , TJ=55
VGS=±8V , VDS=0V
VDS=5V , ID=4A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=4A
VDD=10V , VGS=4.5V , RG=3.3Ω
ID=4A
VDS=15V , VGS=0V , f=1MHz
Min.
20
---
---
---
0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.024
34
40
50
0.5
-2.51
---
---
---
12
1.7
6.2
0.8
1.4
2.2
27.2
16.8
6.8
382
41
33
Max.
---
---
42
50
62
1
---
1
5
±100
---
3.4
8.7
1.1
1.96
4.4
49.0
33.6
13.6
534.8
57.4
46.2
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=4A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
4.7
1.33
Max.
4.6
18.4
1.2
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2

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N-Channel Typical Characteristics
QM2605S
N-Ch and P-Ch Fast Switching MOSFETs
Fig.1 Typical Output Characteristics
12
10
8
6
4
TJ=150
TJ=25
2
0
0.00
0.30
0.60
0.90
VSD , Source-to-Drain Voltage (V)
1.20
Fig.3 Forward Characteristics Of Reverse
1.8
1.4
1
0.6
0.2
-50
0 50 100
TJ ,Junction Temperature ()
Fig.5 Normalized VGS(th) vs. TJ
150
Fig.2 On-Resistance vs. Gate-Source
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
-50
0 50 100
TJ , Junction Temperature ()
Fig.6 Normalized RDSON vs. TJ
3
150

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1000
F=1.0MHz
Ciss
100
Coss
Crss
10
1 5 9 13 17
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
1
DUTY=0.5
21
QM2605S
N-Ch and P-Ch Fast Switching MOSFETs
Fig.8 Safe Operating Area
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
1
PDM
T ON
T
D = TON/T
TJpeak = TC+PDMXRθJC
10 100
Fig.9 Normalized Maximum Transient Thermal Impedance
1000
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4

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QM2605S
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-4.5V , ID=-2A
VGS=-2.5V , ID=-1.5A
VGS=-1.8V , ID=-1A
VGS=VDS , ID =-250uA
VDS=-16V , VGS=0V , TJ=25
VDS=-16V , VGS=0V , TJ=55
VGS=±8V , VDS=0V
VDS=-5V , ID=-2A
VDS=0V , VGS=0V , f=1MHz
VDS=-15V , VGS=-4.5V , ID=-2A
VDD=-15V , VGS=-4.5V , RG=3.3Ω
ID=-2A
VDS=-15V , VGS=0V , f=1MHz
Min.
-20
---
---
---
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.016
105
145
185
-0.5
3.97
---
---
---
6.3
13.1
5.6
0.72
1.45
4
25.6
26
12.4
332
48
42
Max.
---
---
125
170
220
-1
---
1
5
±100
---
26.2
7.8
1.0
2.0
8.0
46
52
24.8
465
67
59
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
IF=-2A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
23
4.7
Max.
-2.8
-11.2
-1.2
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
5