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SUP90142E
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
TO-220AB
Top View
S
D
G
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 7.5 V
Qg typ. (nC)
ID (A)
Configuration
200
0.0152
0.0169
58
90
Single
FEATURES
• ThunderFET® power MOSFET
• Tuned for the lowest RDS - Qoss FOM
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
• DC/DC converter
• Motor drive switch
• DC/AC inverter
• Solar micro inverter
• Class D audio amplifier
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-220AB
SUP90142E-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current (t = 100 μs)
TC = 25 °C
TC = 125 °C
Continuous source-drain diode current
Single pulse avalanche current a
Single pulse avalanche energy a
L = 0.1 mH
Maximum power dissipation
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
200
± 20
90
52
240
90
60
180
375 b
125 b
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
Maximum junction-to-case (drain)
Steady state
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
MAXIMUM
40
0.4
UNIT
°C/W
S16-1647-Rev. A, 22-Aug-16
1
Document Number: 75002
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SUP90142E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS , ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VDS = 200 V, VGS = 0 V, TJ = 175 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 7.5 V, ID = 30 A
VDS = 15 V, ID = 30 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 100 V, VGS = 10 V, ID = 60 A
VDS = 100 V, VGS = 0 V
f = 1 MHz
VDD = 100 V, RL = 1.66 , ID 60 A,
VGEN = 10 V, Rg = 1
Pulse diode forward current (t = 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery charge
ISM
VSD
trr
Qrr
ta
tb
IRM(REC)
IF = 30 A, VGS = 0 V
IF = 30 A, dI/dt = 100 A/μs
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
200 -
-V
2 - 4V
- - 250 nA
- -1
μA
- - 150
- - 5 mA
60 -
-A
- 0.0126 0.0152
- 0.0133 0.0169
- 63 - S
- 3120 -
- 280 - pF
- 24 -
- 58 87
- 17.6 -
nC
- 17.2 -
- 108 162
1.5 3
5
- 14 28
- 125 250
ns
- 27 54
- 80 150
- - 240 A
- 0.85 1.5 V
- 150 300 ns
- 0.9 1.8 nC
- 125 -
ns
- 25 -
- 11.5 20 A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1647-Rev. A, 22-Aug-16
2
Document Number: 75002
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUP90142E
Vishay Siliconix
Axis Title
200 10000
VGS = 10 V thru 7 V
VGS = 6 V
160
1000
120
Axis Title
150 10000
120
1000
90
80
40
0
0
100
VGS = 5 V
2468
VDS - Drain-to-Source Voltage (V)
2nd line
10
10
Output Characteristics
60
30
0
0
TC = 25 °C
100
TC = 125 °C
TC = -55 °C
2468
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
10
0.016
Axis Title
10000
0.015
0.014
VGS = 7.5 V
1000
0.013
0.012
VGS = 10 V
100
0.011
0
20 40 60 80
ID - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current and Gate Voltage
7000
Axis Title
10000
5600
4200
2800
Ciss
1400
Crss
Coss
0
0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
1000
100
10
100
10
ID = 60 A
8
6
4
2
Axis Title
10000
1000
VDS = 100 V, 125 V, 150 V
100
0 10
0 13 26 39 52 65
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
3.0
ID = 30 A
2.5
2.0
1.5
1.0
Axis Title
10000
VGS = 10 V
1000
VGS = 7.5 V
100
0.5 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-1647-Rev. A, 22-Aug-16
3
Document Number: 75002
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUP90142E
Vishay Siliconix
Axis Title
100 10000
10
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.05
0.04
0.03
Axis Title
ID = 30 A
10000
TJ = 125 °C
1000
0.02
100
0.01
TJ = 25 °C
0 10
4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5 10000
0
ID = 5 mA 1000
-0.5
-1.0
ID = 250 μA
100
-1.5
-2.0
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
Axis Title
100 10000
80
TC = -55 °C
60 TC = 25 °C
1000
40 TC = 125 °C 100
20
0 10
0 5 10 15 20 25 30
ID - Drain Current (A)
2nd line
Transconductance
1000
100
10
IDM limited
ID limited
Axis Title
10000
100 μs 1000
Limited by RDS(on) (1)
1
1 ms
10 ms 100
0.1 100 ms, DC
TC = 25 °C
Single pulse
0.01
0.1 1
BVDSS limited
10 100
10
1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-1647-Rev. A, 22-Aug-16
4
Document Number: 75002
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
110 10000
88
1000
66
44
100
22
0 10
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
2nd line
Current Derating a
SUP90142E
Vishay Siliconix
260
ID = 10 mA
250
240
230
220
Axis Title
10000
1000
100
Axis Title
100
10
150 °C
25 °C
10000
1000
100
210
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
1
0.00001
0.0001
0.001
Time (s)
2nd line
0.01
IDAV vs. Time
10
0.1
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1647-Rev. A, 22-Aug-16
5
Document Number: 75002
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000