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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
2N6109
2N6109 PNP PLASTIC POWER TRANSISTOR
General Purpose Amplifier and Switching Application
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN. MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 2.5A; IB = 0.25A
D.C. current gain
IC = 2.5A; VCE = 4V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
VCBO
VCEO
VEBO
IC
max.
max.
max.
max.
max.
max.
min.
max.
60 V
50 V
7.0 A
40 W
150 °C
1.0 V
30
150
max.
max.
max.
max.
60 V
50 V
5.0 V
7.0 A
Continental Device India Limited
Data Sheet
Page 1 of 3

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2N6109
Collector current (Peak value)
Base current
Total power dissipation up to TC = 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 40V
VEB(off) = 1.5V; VCE = 60V
VEB(off) = 1.5V; VCE = 50V; TC = 150°C
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 2.5 A; IB = 0.25 A
IC = 7 A; IB = 3 A
Base emitter on voltages
IC = 2.5A; VCE = 4V
IC = 7A; VCE = 4V
D.C. current gain
IC = 2.5A; VCE = 4V
IC
IB
Ptot
Tj
Tstg
Rth j–c
ICEO
ICEX
ICEX
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VCEsat*
VBE(on)*
VBE(on)*
hFE*
IC = 7A; VCE = 4V
Small-signal current gain f = 50 KHz
IC = 0.5A; VCE = 4V
Output capacitance at f = 1 MHz
IE = 0; VCB = 10V
Transition frequency at f = 1 MHz
IC = 500 mA; VCE = 4V
hFE*
hfe
Co
fT (1)
* Pulse test: pulse width 300 µs; duty cycle 2%.
(1) fT = |hfe|• ftest
max.
10 A
max. 3.0 A
max.
40 W
max. 0.32 W/°C
max. 150 ºC
–65 to +150 ºC
3.125 °C/W
max.
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
max.
min.
min.
max.
min.
1.0 mA
0.1 mA
2.0 mA
1.0 mA
50 V
60 V
5.0 V
1.0 V
3.5 V
1.5 V
3.0 V
30
150
2.3
20
250 pF
10 MHz
Continental Device India Limited
Data Sheet
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Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
Continental Device India Limited
Data Sheet
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