The RF Line NPN Silicon High-Frequency Transistor
1.0W, 400MHz, 28V
Designed for wideband amplifier, driver or oscillator applications in
military, mobile, and aircraft radio.
• Specified 28 V, 400 MHz characteristics —
Output power = 1.0 W
Power gain = 15 dB min.
Efficiency = 45% typ.
• Emitter ballast and low current density for improved MTBF
• Common emitter for improved stability
Released - Rev. 07.07
CASE 305A–01, STYLE 1
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typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
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