U309.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 U309 데이타시트 다운로드

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U308
U309
U310
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Dissipation (& T/\ = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VDS
vgs
•q
Pd
TJ. Tstg
Value
25
25
20
500
4.0
- 65 to + 1 50
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
OFF CHARACTERISTICS
Characteristic
Gate-Source Breakdown Voltage
G(l = 1.0 nA, V DS = 0)
Gate Reverse Current
(Vqs = -15 V)
(vGs = o,ta = i25°o
Gate Source Cutoff Voltage
(VDS = 10 V, Dl = 1.0 nA)
ON CHARACTERISTICS
U308
U309
U310
Zero-Gate-Voltage Drain CurrentO)
(Vds = 10 V, Vqs = 0)
U308
U309
U310
Gate-Source Forward Voltage
(Iq = 10 mA, V DS = 0)
SWITCHING CHARACTERISTICS
Common-Gate Forward TransconductanceO)
(Vds = V, Id = 10 mA, f = 1.0 kHz)
U308
U309
U310
Common-Gate Output Conductance
(Vds = 10 V, Dl = 10 mA, f = 1.0 kHz)
Drain-Gate Capacitance
(Vgs = -iov, vDS = iov, f = lomhz)
Gate-Source Capacitance
(Vgs = -io v, v Ds = 10 v, f = 1.0 mhz)
Equivalent Short-Circuit Input Noise Voltage
(Vds
=
10
v
-
'D
=
10 mA, f
=
100 Hz)
(1) Pulse test duration = 2.0 ms.
(2) See Figures 10 and 11 for Noise Figure and Power Gain information.
Symbol
V(BR)GSS
!GSS
VGS(off)
toss
v GS(f)
flfg
9og
Cgd
Cg S
en
CASE 27-02, STYLE 4
TO-52 (TO-206AC)
JFET
VHF/UHF AMPLIFIER
N-CHANNEL DEPLETION
Min
Typ
Max
Unit
-25 - - V
-
- -150
PA
-150
nA
-1.0
-1.0
-2.5
-
-6.0
-4.0
-6.0
V
mA
12 60
12 30
24 60
_ 1.0 V
- mmhos
10 20
10 20
10 18
150 jimhos
— — 2.5 pF
— — 5.0 PF
10 nVVfiz
6-1 89

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U308, U309, U310
FIGURE 1 - 450 MHz COMMON-GATE AMPLIFIER TEST CIRCUIT
DD
C1 = C2 -= 0.8 - 10 pF. JFD =MVM010W.
C3 = C4 * 8 35 pF Erie =539 002D.
C5 = C6 = 5000 PF Erie (2443 000).
C7 = 1000 pF. Allen Bradley =FA5C.
RFC = 0.33 /jH Miller #9230 30.
LI = One Turn =16 Cu, 1/4" ID. (Air Con
L2p= One Turn =16 Cu, 1/4" ID. (Air Co
L2s = One Turn =16 Cu, 1/4" I.D. (Air Co
FIGURE 2 - DRAIN CURRENT and TRANSFER
CHARACTERISTICS versus GATE-SOURCE VOLTAGE
10
\Vrj S =10V
'dss.
+25°C
60 ~
TA = - 55° C^
50 =
/+25° C^
40 1
'°
1 30
/+150° C
1
<
20 p
><T -550 ci^-^
150° C
FIGURE 3 - FORWARD TRANSCQNDUCTANCE
versus GATE SOURCE VOLTAGE
35
11
^vE 30
DS = iov
< 25
T A = -55°C,
*25°C
§ 20
S
< 15
f
g 10
/O50°C^
+25° C,^"
" -55°c//
+150°C
-4.0
-3.0
-2.0
Iq - V GS , GATE SOURCE VOLTAGE (V0LTSI
lDSS v GS- GATE SOURCE CUTOFF VOLTAGE (VOLTS)
3.0 2.0 1
V GS , GATE SOURCE VOLTAGE (VOLTS)
FIGURE 4 - COMMON-SOURCE OUTPUT
ADMITTANCE and FORWARD TRANSCONDUCTANCE
versus DRAIN CURRENT
r-r
y
" Yfs"
Yf s
=j --
i
t=fc
^ H-
'"5
yo s-
[\l 3S lot 1 = -b. /V
s' <
s
^
0.1 0.2 0.3 0.5 10 20 3.0 5.0 10
Dl
,
DRAIN
CURRENT
(111A)
20 30
50 100
FIGURE 5 - ON RESISTANCE and JUNCTION CAPACITANCE
versus GATE-SOURCE VOLTAGE
R D '/
/
Cgs
Cgri
i.O
7.0 6.0
5
4
3
2
V GS GATE SOURCE VOLTAGE (VOLTS)
1.1
6-190

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U308, U309, U310
FIGURE 6 - COMMON-GATE Y PARAMETER
MAGNITUDE versus FREQUENCY
Vqs = 10 V
di - 10 mA
Ta = 2 "I
Yll
Y 21
Y 22
200 300
Y 12
1
50p
700
(.FREQUENCY (MHz)
1000
FIGURE 7 - COMMON-GATE S PARAMETER
MAGNITUDE versus FREQUENCY
iS 2 n. ISnl
0.85 0.45,
lS 12 l,IS 2 2l
n-ir-,,
, ,,
,
,,
0.060 100
vos = V
mADl = 10
_T A = 2 C
•^22
^N
Sn/
"-"str"
200 300
500 700 1000
f. FREQUENCY (MH?)
FIGURE 8 - COMMON GATE Y PARAMETER
PHASE-ANGLE versus FREQUENCY
"21. "11
180° 50°
.
"12 "22
87"
"22
20°
^"21
40° 86°
60°
80° 85"
"12
"11
__
[1
VDs = K V
'D = 10 mA
T A - 25" C
200 300
500
f. FREQUENCY (MH?)
100°
\ 120° 8<°
.
140°
\
-160° 83°
700
i
1000
FIGURE 9 - S PARAMETER PHASE ANGLE
versbs FREQUENCY
"11. "12
20° 120°
Z^Oj
"21. "22
^21
'
^22
"nS
/
\
i
/
'
V21 S.
V DS = 10V
ln = 10mA
lA = 2b u l
1*
"l
200 300
500 700 1000
f. FREQUENCY (MH?)
FIGURE 10 - NOISE FIGURE and
POWER GAIN versus DRAIN CURRENT
VDD = 20V
( = 450 MHz
BW^IOMh z
Ore Jit in F' gure 1
Gpg
NF
^
---
SO 10 12 14 16 IE
In. DRAIN CURRENT (mA)
20 22 24
FIGURE 11 - NOISE FIGURE and
POWER GAIN versus FREQUENCY
1
V DS - .u .
- Iq = 10mA
-T A = 25°C
5.0 c
:^pg
3.0
"
26
22
2
18
200 300
I, FREQUENCY (MHz
500 700 1000
6-191