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J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J308
J309
J310
SST308
SST309
SST310
U309
U310
VGS(off) (V)
1 to 6.5
1 to 4
2 to 6.5
1 to 6.5
1 to 4
2 to 6.5
1 to 4
2.5 to 6
J308
J309
J310
SST308
SST309
SST310
U309
U310
V(BR)GSS Min (V)
25
25
25
25
25
25
25
25
gfs Min (mS)
8
10
8
8
10
8
10
10
IDSS Min (mA)
12
12
24
12
12
24
12
24
FEATURES
D Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D Very Low Noise: 2.7 dB @ 450 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
For similar dual products packaged in the TO-78, see the
U430/431 data sheet.
TO-226AA
(TO-92)
D1
S2
G3
Top View
J308
J309
J310
TO-236
(SOT-23)
D1
S2
3G
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
TO-206AC
(TO-52)
S
1
2
D
3
Top View
U309
U310
G and Case
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J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . . . . . 55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . 65 to 175_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Power Dissipation :
(J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW
(U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
J/SST308
Limits
J/SST309
J/SST310
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input
Noise Voltage
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
rDS(on)
VGS(F)
gfs
gos
Ciss
Crss
en
IG = 1 mA , VDS = 0 V
VDS = 10 V, ID = 1 nA
VDS = 10 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 9 V, ID = 10 mA
VGS = 0 V, ID = 1 mA
IGVD=S1=0
mA
0V
J
35 25 25 25
V
1 6.5 1 4 2 6.5 V
12 60 12 30 24 60 mA
0.002
1
1
1 nA
0.001
1
1
1 mA
15 pA
35 W
0.7 1 1 1 V
VDS = 10 V, ID = 10 mA
f = 1 kHz
J
VDS = 10 V
VGS = 10 V
f = 1 MHz
SST
J
SST
VDS = 10 V, ID = 10 mA
f = 100 Hz
14
110
4
4
1.9
1.9
6
8 10 8 mS
250 250 250 mS
555
pF
2.5 2.5 2.5
nV
Hz
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common-Gate Power Gainc
Noise Figure
f = 105 MHz
14
gfg
f = 450 MHz
13
f = 105 MHz
0.16
gog
VDS = 10 V
f = 450 MHz
0.55
ID = 10 mA
f = 105 MHz
16
Gpg
f = 450 MHz
11.5
f = 105 MHz
1.5
NF
f = 450 MHz
2.7
mS
dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
NZB
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Document Number: 70237
S-50149—Rev. H, 24-Jan-05

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J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)
Limits
U309
U310
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 10 V, ID = 1 nA
VDS = 10 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 9 V, ID = 10 mA
VGS = 0 V, ID = 1 mA
IG = 10 mA , VDS = 0 V
35 25
25
V
1 4 2.5 6
V
12 30 24 60 mA
0.002
0.15
0.15 nA
0.001
0.15
0.15 mA
15 pA
35 W
0.7 1 1 V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
gfs 14 10 10 mS
VDS = 10 V, ID = 10 mA
f = 1 kHz
gos 110 250 250 mS
Ciss 4
VDS = 10 V, VGS = 10 V
f = 1 MHz
Crss 1.9
en
VDS = 10 V, ID = 10 mA
f = 100 Hz
6
55
pF
2.5 2.5
nV
Hz
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common-Gate Power Gainc, d
Noise Figured
f = 105 MHz
14
gfg
f = 450 MHz
13
f = 105 MHz
0.16
mS
gog
VDS = 10 V
f = 450 MHz
0.55
ID = 10 mA
f = 105 MHz
16 14
14
Gpg
f = 450 MHz
11.5 10
10
dB
f = 105 MHz
1.5
2
2
NF
f = 450 MHz
2.7
3.5 3.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
d. Not a production test.
NZB
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
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J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
100 vs. Gate-Source Cutoff Voltage
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
80
50
40
10 nA
1 nA
Gate Leakage Current
IG @ ID = 10 mA
TA = 125_C
200 mA
60
gfs
40 IDSS
20
30
20
10
0
0
1 2 3 4
VGS(off) Gate-Source Cutoff Voltage (V)
0
5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100 300
80 240
60 rDS gos
40
180
120
20
0
0
rgDoSs
@
@
VIDD=S
1
=
m10AV, ,VVGGSS==00VV,
f
=
1
kHz
1 2 3 4
VGS(off) Gate-Source Cutoff Voltage (V)
60
0
5
Output Characteristics
15
VGS(off) = 1.5 V
12
VGS = 0 V
0.2 V
9
0.4 V
6
0.6 V
3 0.8 V
1.0 V
0
0 0.2 0.4 0.6 0.8 1
VDS Drain-Source Voltage (V)
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100 pA
IGSS @ 125_C
10 pA
1 pA
TA = 25_C
10 mA
200 mA
IGSS @ 25_C
0.1 pA
0
3 6 9 12
VDG Drain-Gate Voltage (V)
15
Common-Source Forward Transconductance
vs. Drain Current
20
VGS(off) = 3 V
VDS = 10 V
f = 1 kHz
16
TA = 55_C
12
8 25_C
4
125_C
0
0.1
1
ID Drain Current (mA)
10
Output Characteristics
30
VGS(off) = 3 V
24 VGS = 0 V
18
12
6
0
0
0.4 V
0.8 V
1.2 V
1.6 V
2.0 V
2.4 V
0.2 0.4 0.6 0.8
VDS Drain-Source Voltage (V)
1
Document Number: 70237
S-50149—Rev. H, 24-Jan-05

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J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
20
VGS(off) = 1.5 V
VGS = 0 V
16 0.2 V
Output Characteristics
50
VGS(off) = 3 V
VGS = 0 V
40
0.4 V
12 30
0.4 V
0.8 V
8
4
0
0
0.6 V
0.8 V
1.0 V
2 46 8
VDS Drain-Source Voltage (V)
10
20
10
0
0
1.2 V
1.6 V
2.0 V
2.4 V
2 46 8
VDS Drain-Source Voltage (V)
10
Transfer Characteristics
30
VGS(off) = 1.5 V
VDS = 10 V
24
Transfer Characteristics
100
VGS(off) = 3 V
VDS = 10 V
80
18 TA = 55_C
25_C
12
60 TA = 55_C
25_C
40
6 125_C
20 125_C
0
0
0.4
0.8
1.2
1.6
2
VGS Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
30
VGS(off) = 1.5 V
VDS = 10 V
f = 1 kHz
24 TA = 55_C
25_C
18
125_C
12
6
0
0
0.6
1.2
1.8
2.4
VGS Gate-Source Voltage (V)
3
Transconductance vs. Gate-Source Voltage
50
VGS(off) = 3 V
VDS = 10 V
f = 1 kHz
40
TA = 55_C
30
25_C
20
125_C
10
0
0
0.4
0.8
1.2
1.6
VGS Gate-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
2
0
0
0.6
1.2
1.8
2.4
3
VGS Gate-Source Voltage (V)
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