BC259.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 BC259 데이타시트 다운로드

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, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BC177,8,9
BC257,8,9
.BC307,8,9
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
BC320,1,2
THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL
SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,
BC177, 8, 9 are complementary to BC107, 8, 9.
BC257, 8, 9 are complementary to BC167, 8, 9.
BC307, 8, 9 are complementary to BC237, 8, 9.
BC320, 1, 2 are complementary to BC317, 8, 9.
CASE
TO-18
TO-92B
TO-92F
TO-92A
CBS
BC177,8,9
ECB
BC257,8,9
CEB
BC307,8,9
SSC
BC320fl,2
ABSOLUTE MAXIMUM RATINGS
TYPE -VCBO -VCES
(v) (v)
BC177
BC178
BC179
50 50
30 30
25 25
BC257
BC258
BC259
50 50
30 30
25 25
3C307
BCJ08
3C309
50 50
30 30
25 25
-VCEO
(v)
45
25
20
45
25
20
45
25
20
-VEBO
(v)
5
5
5
5
5
5
5
5
-IC(DC)
(mA)
100
100
100
100
100
100
100
100
100
ptot *
(mW)
300
300
300
300
300
300
300
300
300
Tjt T8tg
-55 to 175°C
-55 to 150°C
-55 to 150°C
BC320
BC321
BC322
50
45
30
45
30
20
* Tstal Power Dissipation ®
2°C
6
5
5
150
150
150
310
310 -55 to 150°C
310
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Informat.on hirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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3IjP6TRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
MIN TYP MAX UNIT TEST CONDITIONS
Collector-Base Breakdown Voltage
-BVCBO
V -IC=10uA lE-0
Collector-Emitter Breakdown Voltage -LVCEO * Note 1
V -IC=2mA IB-O
Smitter-Base Breakdown Voltage
-BVEBO
1
Collector Cutoff Current
-ICES
BC177, 178, 179 "\, 258, 259 | only
BC307, 308, 309 J
V -lE-ljiA Ic-0
15 nA VCS=VCES VBE-O
4 uA VCE-VCES VBE-O
TA=125°C
Collector Cutoff Current
BC320, 321, 322 only
-ICBO
30 nA -VCB-20V lE-0
15 uA -VcB=20V IE=0
TA=IOOQC
Collector-Emitter Saturation Voltage -VCE(sat)*
types
0.1 0.3 V
0.25
V
-IC=10mA -!B=0.5mA
-IC=100mA -lB=5mA
Collector-Emitter Knee Voltage
-VCEK
BC177, 178, 1791 onl
0.3 0.6 V
^ BC307, 308, 309 \r Saturation Voltage
-I(3=10mA,lB*value at
which -lc=llmA -VcE=lV
All types
-VBE(sat)*
0.72
0.92
V -IC-10mA -lB=0-5mA
V -1C -100mA -lB-5mA
Base-Emitter Voltage All types
BC320, 321,322 only
-VBB *
-VBE *
0.6 0.65 0.75' V
0.7 0.77V
-IC=2mA -VCE-5V
-IC-lOmA -VcB=5V
Current Gain-Bandwidth Product
Collector-Base Capacitance
BC177. 178, 179
BC257, 258, 259
3C307, 308, 309
BC320, 321, 322
fT
Cob
180 MHz -IC=10mA -VcE=5V
-VCB=IOV IE-O
3.6 7 PF f-lMHz
PF
J.2 6 pF
3-2 6 PF
3-2 4 PP
Noise Figure
BC177, 178
NF
BC257, 258
BC307, 308
BC320, 321
* &ilse Test t Pulse Width=0.3mS, Duty Cycle=l/0
-IC-0.2mA -VCE=5V
2 10 dB RG-2KA f-lkHz
dB Af.200Hz
2 10 dB
2 10 dB
2 6 dB
1 : equal_to_the value of absolute maximum ratings

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No/5e Figure
PARAMETER
BC179 "I
BC259 > only
BCJ09
BC322 1
SYMBOL
NF
MIH TYP MAX UNIT
1.2 4 dB
1.2 4 dB
TEST CONDITIONS
-1C=0. 2mA -7CE-57
RG=2K& f-lKHz
Af-200Hz
-IC=0.2mA -703=5^
RG=2KA f=30Hz-15KHz
D.C. CURRENT GAIN (HFE) @ -V£8""57 TA=25°C
at-Ic HFE G-ROUP vi
HFE GROUP A
(Pulsed) KIN TYP MAX
0.01mA
70
2mA 70 110 140
MIN TYP MAX
110
110 170 220
100mA
60
80
HFE GROUP B
MIN TYP MAX '
200
200 300 450
140
HFE GROUP C
MIN TYP MAX
330
420 520 800
240
h - PARAMETERS © -IC=2mA -VCE=57 f-lkHz TA=25°C
^ h - PARAMETER
SYMBOL
HFE GROUP 71 HFE GROUP A
MIN TYP MAX MIN TYP MAX
HFE GROUP B
MIN TYP MAX
HFE GROUP c
MIN TYP MAX
UNIT
Injwt Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
hie
nre
hfe
hoe
1.4
2.5
75 HO 150
20
2.7
3
125 190 260
25
4-5 •
3.5
240 330 500
35
8.7
4
450 580 900
60
Kfl
xlO-4
rv
TYPICAL CHARACTERISTICS AT TA=25°C (Pulse Test)
D.C. CURRENT GAIN
VS COLLECTOR CURRENT
VBE AND vCE(sat)
VS COLLECTOR CURRENT
200
0.01
100