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MAXIMUM RATINGS
Rating
'
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
ic
PD
Tj. T s tg
Value
300
300
5
0.5
0.8
4.57
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
°C
Symbol
RflJC
Max
35
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
(IC = 10 mA, Ib = 0)
Collector Cutoff Current
(VCB = 300 V, El = 0)
(V C B = 240 V, El = 0)
(V C B = 240 V, Ie = 0)
Collector Cutoff Current
(V C E = 240 V, Bl = 0)
Emitter Cutoff Current
(V EB = 3 V, Ic = 0)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
PC = 1 mA, Ib = 40 uA)
Base-Emitter Saturation Voltage
(IC = 1 mA, Ib = 10 uA)
Common Emitter Static Value of the Forward Current Transfer Ratio
(h21E(D *C = 20 uA, VCE = 0.5 V)
(h21E(2) Ic = 200 uA, VCE = 0.5 V)
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
dC = 15 mA, VCB = 1 V)
Collector-Base Capacitance
(VcB = 5 V, f = 1 MHz)
(1) Pulsed: Pulse Duration = 300 \is. Duty Cycle = 1%.
P038
(CECC 50002-169)
CASE 79, STYLE 1
TO-39 (TO-205AD)
HIGH VOLTAGE TRANSISTOR
PNP SILICON
Symbol Min
VcEO(susl
ICBO
300
'CEO
lEBO
VCE(sat)
VBE(sat)
hFE
25
25
fT
Co bo
35
Unit
50 HA
10 HA
100 nA
500
nA
100
0.8
200
200
"
MHz
pF
25
4-273