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P039
(CECC 50002-170)
CASE 79, STYLE 1
TO-39 (TO-205AD)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to 2N3439 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation T^ = 25°C
Derate above 25°C
Total Device Dissipation
Derate above 25°C
T/j, = 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T stg
Value
300
300
5
0.5
0.6
4.0
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Sustaining Voltage(1)
dC= 10 mA, Ir = 0)
Collector-Emitter Cutoff Current
(VCE = 240 V)
Collector-Base Cutoff Current
(Vcb = 240 V)
(VCB = 240 V, TA mh = 100°C)
Emitter-Base Cutoff Current
(VEB = 3 V)
ON CHARACTERISTICS
Static Forward Current Transfer(1)
(IC = 100 mA, Vce = 1 V)
(IC = 1.0 mA, Vce = 1 V)
(IC = 25 mA, Vcf = 1 V)
Collector-Emitter Saturation Voltage(1)
(IC = 200 mA, Bl = 20 mA)
(IC = 25 mA, Bl = T.25 mA)
Base-Emitter Saturation Voltage(1)
dC = 25 mA, Ir = 1.25 mA)
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
(IC = 50 mA, Vcr = 10 V, f = 5 MHz)
Output Capacitance
(VCB = 1 V, f = 1 mHz)
(1) Pulsed: Pulse Duration = 300 us. Duty Cycle = 1%.
Symbol Min
VCEO(sus)
'CEO
300
'CBO
lEBO
hFE
VcEjsat)
25
30
30
VBE(sat)
Cobo
10
Max
Unit
uA
10
500 nA
5 uA
MA
150
200
3.0
0.2
0.9
MHz
pF
25
4-274