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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFETs Low Frequency/
Low Noise
N–Channel — Depletion
1 DRAIN
J202
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Source Voltage
VDS
40
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGS
IG
PD
40
40
50
310
2.82
Storage Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc)
Gate Reverse Current
(VGS = –20 Vdc)
Gate Source Cutoff Voltage
(VDS = 20 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 20 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 20 Vdc, f = 1.0 kHz)
v1. Pulse Width 2.0 ms.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
yfs
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
– 40
– 0.8
Max
–100
– 4.0
Unit
Vdc
pA
Vdc
0.9 4.5 mAdc
1000
mmhos
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–141

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J202
TYPICAL CHARACTERISTICS
5
VDS = 15 V
4 VGS = 0
WRS = 1 M
3
2
1
0
0.01
0.1 1.0
f, FREQUENCY (kHz)
10
Figure 1. Noise Figure versus Frequency
100
^1.2
VGS(off) –1.2 V
1.0
VGS = 0 V
0.8 – 0.2 V
0.6
– 0.4 V
0.4
– 0.6 V
0.2 – 0.8 V
– 1.0 V
0
0 5 10 15 20 25
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 3. Typical Drain Characteristics
14
12 VDS = 15 V
VGS = 0
10 f = 1 kHz
8
6
4
2
0
0.001
0.01
0.1
1.0
RS, SOURCE RESISTANCE (Megohms)
Figure 2. Noise Figure versus Source
Resistance
10
^1.2
VGS(off) –1.2 V
1.0
0.8
VDS = 15 V
0.6
0.4
0.2
0
– 1.2 – 0.8
– 0.4
VGS, GATE – SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer
Characteristics
0
4–142
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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TYPICAL CHARACTERISTICS
J202
5
4
^VGS(off) – 3.5 V
3
VGS = 0 V
–1 V
2
–2 V
1
–3 V
0
0 5 10 15 20 25
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 5. Typical Drain Characteristics
10
VGS = 0 V
^8 VGS(off) – 5.8 V
–1 V
6
–2 V
4
–3 V
2
–4 V
–5 V
0
0 5 10 15 20
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
Figure 7. Typical Drain Characteristics
25
^5
VGS(off) – 3.5 V
4
3
VDS = 15 V
2
1
0
–5 –4 –3 –2 –1
VGS, GATE – SOURCE VOLTAGE (VOLTS)
Figure 6. Common Source Transfer
Characteristics
^10
VGS(off) – 5.8 V
8
6
VDS = 15 V
4
2
0
–7 –6 –5 –4 –3 –2 –1
VGS, GATE – SOURCE VOLTAGE (VOLTS)
Figure 8. Common Source Transfer
Characteristics
0
0
Note: Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630
ms, Duty Cycle = 10%). Under dc conditions, self heat-
ing in higher IDSS units reduces IDSS.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–143