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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET High Frequency Amplifier
N–Channel — Depletion
1 DRAIN
3
GATE
2 SOURCE
J304
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGS
IG
PD
– 30
– 30
10
350
2.8
Lead Temperature
(1/16from Case for 10 Seconds)
TL 300
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
Gate – Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Unit
Vdc
Vdc
mA
mW
mW/°C
°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
yos
Re(yfs)
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
30
– 2.0
5.0
4500
Max Unit
100
– 6.0
Vdc
pA
Vdc
mA
15
50
7500
mmhos
mmhos
REV 1
4–144
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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POWER GAIN
24
f = 100 MHz
20
16
12 400 MHz
8.0 Tchannel = 25°C
VDS = 15 Vdc
VGS = 0 V
4.0
0 2.0 4.0 6.0 8.0 10 12 14
ID, DRAIN CURRENT (mA)
Figure 1. Effects of Drain Current
J304
INPUT
TO 50
SOURCE
NEUTRALIZING
COIL
L1
C1
C5
RgL3
C6
C2
VGS
C3
C4
CASE
L2
C7
TO 500
LOAD
COMMON
VDS
+15 V
ID = 5.0 mA
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE:
The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation
C1
C2
C3
C4
C5
C6
C7
L1
L2
L3
VALUE
100 MHz 400 MHz
7.0 pF
1000 pF
1.8 pF
17 pF
3.0 pF
1.0 pF
1–12 pF 0.8–8.0 pF
1–12 pF 0.8–8.0 pF
0.0015 µF
0.0015 µF
3.0 µH*
0.15 µH*
0.14 µH*
0.001 µF
0.001 µF
0.2 µH**
0.03 µH**
0.022 µH**
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16long,
3/8I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4long,
3/8I.D. (AIR CORE).
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4I.D.
(AIR CORE).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–145

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J304
10
8.0
6.0
4.0
f = 400 MHz
NOISE FIGURE
(Tchannel = 25°C)
6.5
ID = 5.0 mA
5.5
4.5
3.5
f = 400 MHz
VDS = 15 V
VGS = 0 V
2.0
100 MHz
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Effects of Drain–Source Voltage
2.5 100 MHz
1.5
0 2.0 4.0 6.0 8.0 10 12
ID, DRAIN CURRENT (mA)
Figure 4. Effects of Drain Current
INTERMODULATION CHARACTERISTICS
+ 40
+ 20
0 VDS = 15 Vdc
f1 = 399 MHz
– 20 f2 = 400 MHz
– 40
3RD ORDER INTERCEPT
– 60
– 80
– 100
– 120
– 140
– 160
– 120
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
– 100 – 80 – 60 – 40 – 20
Pin, INPUT POWER PER TONE (dB)
0
+ 20
Figure 5. Third Order Intermodulation Distortion
14
4–146
Motorola Small–Signal Transistors, FETs and Diodes Device Data