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N-Channel JFETs
J304/305
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J304
J305
VGS(off) (V)
2 to 6
0.5 to 3
V(BR)GSS Min (V)
30
30
gfs Min (mS)
4.5
3
IDSS Min (mA)
5
1
FEATURES
D Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz
D Very Low Noise: 3.8 dB (typ) @
400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
S1
D2
G3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
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J304/305
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Currentb
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input Noise Voltage
Symbol
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
gfs
gos
Ciss
Crss
Coss
en
Test Conditions
IG = 1 mA , VDS = 0 V
VDS = 15 V, ID = 1 nA
VDS = 15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 100_C
VDG = 10 V, ID = 1 mA
VDS = 10 V, VGS = 6 V
VGS = 0 V, ID = 300 mA
IG = 1 mA , VDS = 0 V
VDS = 15 V, VGS = 0 V, f = 1 kHz
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 10 V, VGS = 0 V
f = 100 Hz
Typa
35
2
0.2
20
2
200
0.7
2.2
0.7
1
10
Limits
J304
J305
Min Max Min Max
30 30
2
6 0.5
3
5 15 1
8
100
100
4.5 7.5
3
50 50
Unit
V
V
mA
pA
nA
pA
W
V
mS
mS
pF
nV
Hz
TYPICAL HIGH-FREQUENCY SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits (Typ)
J304
J305
Parameter
Symbol
Test Conditions
100 400 100 400
MHz MHz MHz MHz Unit
High-Frequency
Common-Source Input Conductance
Common-Source Input Susceptance
Common-Source Output Conductance
Common-Source Output Susceptance
Common-Source Forward Transconductance
Common-Source Power Gain
Noise Figure
giss
biss
goss
boss
gfs
Gps
NF
VDS = 15 V, VGS = 0 V
VDS = 15 V, VGS = 0 V
VDS = 15 V, ID = 5 mA
RG = 1 kW
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v2%.
80 800 80
2 7.5 2
60 80 60
0.8 3.6 0.8
4.4 4.2
3
20 11
1.7 3.8
mS
mS
mS
mS
dB
NH
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70236
S-50077—Rev. E, 24-Jan-05

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J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20 10
16 IDSS
8
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500 50
rDS @ ID = 300 mA, VGS = 0 V
400
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
40
12 gfs
8
6 300 rDS
gos
4 200
30
20
4
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
2
f = 1 kHz
00
0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
100 nA
10 nA
1 nA
Gate Leakage Current
TA = 125_C
5 mA
1 mA
0.1 mA
100 pA
10 pA
1 pA
5 mA
TA = 25_C
1 mA
0.1 mA
IGSS
@
125_C
IGSS @ 25_C
0.1 pA
0
10
8
6
4
2
4 8 12 16
VDG Drain-Gate Voltage (V)
Output Characteristics
VGS(off) = 2 V
20
VGS = 0 V
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
1.2 V
0
02
4
1.4 V
6 8 10
VDS Drain-Source Voltage (V)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
100 10
00
0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
10
VGS(off) = 3 V
VDS = 10 V
f = 1 kHz
8
6 TA = 55_C
25_C
4
125_C
2
0
0.1
15
12
9
6
3
0
0
1
ID Drain Current (mA)
Output Characteristics
VGS(off) = 3 V
10
VGS = 0 V
0.3 V
0.6 V
0.9 V
1.2 V
1.5 V
1.8 V
24
68
VDS Drain-Source Voltage (V)
10
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