J308.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 J308 데이타시트 다운로드

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J308
JFET VHF/UHF Amplifiers
NChannel — Depletion
MAXIMUM RATINGS
Rating
Drain Source Voltage
GateSource Voltage
Forward Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
IGF
PD
TJ
Tstg
Value
25
25
10
350
2.8
65 to +125
65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
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CASE 2911, STYLE 5
TO92 (TO226AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(IG = 1.0 μAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
GateSource Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Min
25
1.0
1.0
2.0
12
12
24
2 SOURCE
Typ Max
Unit
— — Vdc
1.0 nAdc
1.0 μAdc
Vdc
6.5
4.0
6.5
mAdc
— 60
— 30
— 60
— 1.0 Vdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
J308/D

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J308
Characteristic
SMALLSIGNAL CHARACTERISTICS
CommonSource Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J308
J309
J310
CommonSource Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
CommonGate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 3.0%.
SMALLSIGNAL CHARACTERISTICS (continued)
CommonSource Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
CommonGate Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
CommonSource Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J308
J309
J310
CommonSource Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
CommonGate Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J308
J309
J310
CommonGate Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J308
J309
J310
GateDrain Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
GateSource Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz)
Equivalent ShortCircuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
Symbol
Min
Typ
Max Unit
Re(yis)
mmhos
— 0.7 —
— 0.7 —
— 0.5 —
Re(yos)
0.25
— mmhos
Gpg — 16 — dB
Re(yfs)
Re(yig)
gfs
gos
gfg
gog
Cgd
Cgs
— 12 — mmhos
— 12 — mmhos
μmhos
8000
— 20000
10000 — 20000
8000
— 18000
— — 250 μmhos
μmhos
— 13000 —
— 13000 —
— 12000 —
μmhos
— 150 —
— 100 —
— 150 —
— 1.8 2.5 pF
— 4.3 5.0 pF
NF — 1.5 — dB
en — 10 — nVń ǸHz
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J308
50 Ω
SOURCE
U310
C3
L1 C1
C5
L2P
C2
C6
50 Ω
LOAD
L2S
C4
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539002D.
C5 = C6 = 5000 pF Erie (2443000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 μH Miller #923030.
L1 = One Turn #16 Cu, 1/4I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4I.D. (Air Core).
Figure 1. 450 MHz CommonGate Amplifier Test Circuit
70
60
VDS = 10 V
50
IDSS
40 +25 °C
70
TA = −55°C
+25 °C
60
50
40
30 +150°C 30
20
+25 °C
20
−55 °C
10 +150°C 10
−5.0 −4.0 −3.0 −2.0 −1.0
ID − VGS, GATE−SOURCE VOLTAGE (VOLTS)
IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
0
0
Figure 2. Drain Current and Transfer
Characteristics versus GateSource Voltage
35
30 VDS = 10 V
f = 1.0 MHz
25
TA = −55°C
+25 °C
20
+150°C
15 +25 °C
10 −55 °C
+150°C
5.0
0
5.0 4.0 3.0 2.0 1.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
0
Figure 3. Forward Transconductance
versus GateSource Voltage
100 k
10 k
1.0 k
Yfs Yfs
100
1.0 k
VGS(off) = −2.3 V =
10
Yos VGS(off) = −5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 4. CommonSource Output
Admittance and Forward Transconductance
versus Drain Current
10 120
RDS
96
7.0
72
Cgs
4.0 48
Cgd 24
1.0
00
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 5. On Resistance and Junction
Capacitance versus GateSource Voltage
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