MPSH11.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 MPSH11 데이타시트 다운로드

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MPSH10
MPSH11
SILICON
NPN RF TRANSISTORS
TO-92 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSH10 and
MPSH11 are silicon NPN RF transistors manufactured
by the epitaxial planar process and designed for low
noise UHF/VHF amplifier and high output oscillator
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
PD
TJ, Tstg
ΘJA
30
25
3.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=25V
IEBO
VEB=2.0V
BVCBO
IC=100μA
30
BVCEO
IC=1.0mA
25
BVEBO
IE=10μA
3.0
VCE(SAT) IC=4.0mA, IB=0.4mA
VBE(ON)
VCE=10V, IB=4.0mA
hFE VCE=10V, IC=4.0mA
60
fT
VCE=10V, IC=4.0mA, f=100MHz
650
Ccb VCB=10V, IE=0, f=1.0MHz
Crb
VCB=10V, IE=0, f=1.0MHz (MPSH10)
0.35
Crb
VCB=10V, IE=0, f=1.0MHz (MPSH11)
0.60
rb’Cc
VCB=10V, IC=4.0mA, f=31.8MHz
MAX
100
100
0.50
0.95
0.70
0.65
0.90
9.0
UNITS
V
V
V
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
pF
ps
R0 (22-May 2013)

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MPSH10
MPSH11
SILICON
NPN RF TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R0 (22-May 2013)