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BDC04
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to MPSW5T for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBQ
VEBO
ic
PD
pd
Tj, T stg
Symbol
Rfcuc
R^jc
Value
20
25
5.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
' °C/W
°c/w
ELECTRICAL CHARACTERISTICS <TA = 25 °C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 100 uAdc, = 0)
Emitter-Base Breakdown Voltage
(IE = 100 uAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 25 Vdc, Ie = 0)
Emitter Cutoff Current
(V E b = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 500 mAdc, Vce = 1 Vdc)
(IC = 5 mAdc, Vce = 1 Vdc)
(IC = 1000 mAdc, VcE = 1 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1000 mAdc, Ib = 100 mAdc)
Base-Emitter On Voltage
dC = 1000 mAdc, VcE = 1 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(IC = 50 mAdc, V C E = 1 Vdc, f = 20 MHz)
Output Capacitance
(Vqb = 1 o vdc, ie = o, f = 1 .o mhz)
(1) Puise Test: Puise Width S 300 us, Duty Cycle S 2.0%.
Symbol
V(BR)CE0
V(BR)CB0
V(BR)EBO
ICBO
lEBO
hFE
VcE(sat)
VBE(on)
fT
Cobo
20
25
5.0
85
50
60
50
Max.
_
0.1
0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
375
Vdc
0.7
Vdc
1.2
MHz
pF
30
2-148