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BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
Pb−Free Packages are Available
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol Max Unit
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
PD
RqJA
PD
RqJA
TJ, Tstg
225 mW
1.8 mW/°C
556 °C/W
300
2.4
417
−65 to
+150
mW
mW/°C
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
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Cathode
1
Anode
1
2
3
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
xxxM
xxx = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device*
Package
Shipping
BZX84CxxxLT1 SOT−23 3000/Tape & Reel
BZX84CxxxLT1G SOT−23 3000/Tape & Reel
(Pb−Free)
BZX84CxxxLT3
BZX84BxxxLT1
SOT−23 10,000/Tape & Reel
SOT−23 3000/Tape & Reel
BZX84BxxxLT1G SOT−23 3000/Tape & Reel
(Pb−Free)
BZX84BxxxLT3 SOT−23 10,000/Tape & Reel
*The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 7
1
Publication Order Number:
BZX84C2V4LT1/D

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BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
Parameter
VZ
IZT
ZZT
IR
VR
IF
VF
QVZ
C
Reverse Zener Voltage @ IZT
Reverse Current
Maximum Zener Impedance @ IZT
Reverse Leakage Current @ VR
Reverse Voltage
Forward Current
Forward Voltage @ IF
Maximum Temperature Coefficient of VZ
Max. Capacitance @ VR = 0 and f = 1 MHz
I
IF
VZ VR
IIRZT VF
V
Zener Voltage Regulator
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BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device
BZX84C2V4LT1, G*
Device
Marking
Z11
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Min Nom Max
2.2 2.4 2.6
ZZT1
(W)
@ IZT1 =
5 mA
100
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min Max
1.7 2.1
ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min Max
ZZT3
(W)
@ IZT3 =
20 mA
600 2.6 3.2
50
Max Reverse
Leakage
Current
IR
mA
@
VR
Volts
qVZ
(mV/k)
@ IZT1 = 5 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
50 1 −3.5 0
450
BZX84C2V7LT1, G* Z12 2.5 2.7 2.9 100 1.9 2.4 600
3 3.6
50
20 1 −3.5 0
450
BZX84C3V0LT1
Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450
BZX84C3V3LT1, G* Z14 3.1 3.3 3.5
95
2.3 2.9 600 3.6 4.2
40
5 1 −3.5 0
450
BZX84C3V6LT1, G* Z15 3.4 3.6 3.8
90
2.7 3.3 600 3.9 4.5
40
5 1 −3.5 0
450
BZX84C3V9LT1, G* Z16 3.7 3.9 4.1
90
2.9 3.5 600 4.1 4.7
30
3
1 −3.5 −2.5
450
BZX84C4V3LT1, G*
W9
4 4.3 4.6
90
3.3 4
600 4.4 5.1
30
3 1 −3.5 0
450
BZX84C4V7LT1
Z1
4.4 4.7
5
80 3.7 4.7 500 4.5 5.4 15
3 2 −3.5 0.2 260
BZX84C5V1LT1
Z2 4.8 5.1 5.4 60
4.2 5.3
480
5 5.9
15
2 2 −2.7 1.2 225
BZX84C5V6LT1
Z3
5.2 5.6
6
40 4.8 6 400 5.2 6.3 10
1 2 −2.0 2.5 200
BZX84C6V2LT1
Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8
6
3 4 0.4 3.7 185
BZX84C6V8LT1
Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4
6
2 4 1.2 4.5 155
BZX84C7V5LT1
Z6 7 7.5 7.9 15 6.9 7.9 80
78
6
1 5 2.5 5.3 140
BZX84C8V2LT1
Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8
6
0.7 5 3.2 6.2
135
BZX84C9V1LT1
Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7
8
0.5 6 3.8 7.0
130
BZX84C10LT1, G*
Z9 9.4 10 10.6 20
9.3 10.6
150
9.4 10.7
10
0.2 7 4.5 8.0
130
BZX84C11LT1, G*
Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
BZX84C12LT1
Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
BZX84C13LT1, G*
Y3 12.4 13 14.1
30
12.3
14
170 12.5 14.2
15
0.1 8
7.0 11.0
120
BZX84C15LT1
Y4 14.3 15 15.8
30
13.7 15.5 200 13.9 15.7
20
0.05 10.5 9.2 13.0
110
BZX84C16LT1, G*
Y5 15.3 16 17.1
40
15.2
17
200 15.4 17.2
20
0.05 11.2 10.4 14.0
105
BZX84C18LT1
Y6 16.8 18 19.1 45
16.7 19
225 16.9 19.2
20
0.05 12.6 12.4 16.0
100
BZX84C20LT1
Y7 18.8 20 21.2
55
18.7 21.1 225 18.9 21.4
20
0.05 14 14.4 18.0
85
BZX84C22LT1
Y8 20.8 22 23.3
55
20.7 23.2 250 20.9 23.4
25
0.05 15.4 16.4 20.0
85
BZX84C24LT1
Y9 22.8 24 25.6
70
22.7 25.5 250 22.9 25.7
25
0.05 16.8 18.4 22.0
80
Device
BZX84C27LT1, G*
Device
Marking
Y10
VZ1 Below
@ IZT1 = 2 mA
Min
25.1
Nom
27
Max
28.9
ZZT1
Below
@ IZT1 =
2 mA
80
VZ2 Below
@ IZT2 = 0.1 m
A
Min Max
25 28.9
ZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
ZZT3
Below
@ IZT3 =
10 mA
300 25.2 29.3
45
Max Reverse
Leakage
Current
IR
mA
@
VR
(V)
0.05 18.9
qVZ
(mV/k) Below
@ IZT1 = 2 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
21.4 25.3
70
BZX84C30LT1
Y11 28 30 32
80
27.8
32
300 28.1 32.4
50 0.05 21 24.4 29.4 70
BZX84C33LT1
Y12 31 33 35
80
30.8
35
325 31.1 35.4
55 0.05 23.1 27.4 33.4 70
BZX84C36LT1
Y13 34 36 38
90
33.8
38
350 34.1 38.4
60 0.05 25.2 30.4 37.4 70
BZX84C39LT1, G*
Y14 37 39 41
130
36.7
41
350 37.1 41.5
70
0.05 27.3 33.4 41.2
45
BZX84C43LT1, G*
Y15 40 43 46
150
39.7
46
375 40.1 46.5
80
0.05 30.1 37.6 46.6
40
BZX84C47LT1
Y16 44 47 50
170
43.7
50
375 44.1 50.5
90
0.05 32.9 42.0 51.8
40
BZX84C51LT1
Y17 48 51 54
180
47.6
54
400 48.1 54.6 100 0.05 35.7 46.6 57.2
40
BZX84C56LT1
Y18 52 56 60
200
51.5
60
425 52.1 60.8 110 0.05 39.2 52.2 63.8
40
BZX84C62LT1
Y19
58 62 66
215
57.4
66
450 58.2 67
120 0.05 43.4 58.8 71.6
35
BZX84C68LT1
Y20 64 68 72
240
63.4
72
475 64.2 73.2 130 0.05 47.6 65.6 79.8
35
BZX84C75LT1, G*
Y21 70 75 79
255
69.4
79
500 70.3 80.2
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
140
0.05 52.5 73.4 88.6
35
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BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device
Device
Marking
VZ (Volts) @ IZT = 5 mA
(Note 4)
Min Nom Max
ZZT (W) @
IZT = 5 mA
(Note 4)
Max
Max Reverse
Leakage
Current
IR VR
@
mA Volts
qVZ
(mV/k)
@ IZT = 5 mA
Min Max
BZX84B4V7LT1
T10
4.61 4.7 4.79
80
3
2
−3.5
0.2
BZX84B5V1LT1
T11
5.00 5.1 5.20
60
2
2
−2.7
1.2
BZX84B5V6LT1
T12
5.49 5.6 5.71
40
1 2 −2 2.5
BZX84B6V2LT1, G*
T13
6.08 6.2 6.32
10
3 4 0.4 3.7
BZX84B6V8LT1, G*
T14
6.66 6.8 6.94
15
2 4 1.2 4.5
BZX84B7V5LT1
T15
7.35 7.5 7.65
15
1 5 2.5 5.3
BZX84B8V2LT1, G*
T16
8.04 8.2 8.36
15
0.7 5 3.2 6.2
BZX84B9V1LT1, G*
T17
8.92 9.1 9.28
15
0.5 6 3.8 7
BZX84B16LT1
T19
15.7 16 16.3
40
0.05
11.2 10.4
14
BZX84B18LT1
T20
17.6 18 18.4
45
0.05
12.6
12.4
16
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
C (pF)
@ VR =0,
f = 1 MHz
260
225
200
185
155
140
135
130
105
100
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BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
8
7 TYPICAL TC VALUES
6
5
4
3
VZ @ IZT
2
1
0
−1
−2
−3 2 3 4 5 6 7 8 9 10 11
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
12
100
TYPICAL TC VALUES
10
VZ @ IZT
110
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
100
1000
IZ = 1 mA
100
5 mA
20 mA
10
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
1000
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
10
150°C 75°C 25°C 0°C
11
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE
VF, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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