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Silicon Epitaxial Planar Z–Diodes
Features
D Sharp edge in reverse characteristics
D Low reverse current
D Low noise
D Very high stability
BZX85B...
Vishay Telefunken
Applications
Voltage stabilization
94 9369
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Junction temperature
l=4mm, TL=25°C
Storage temperature range
Type
Symbol
PV
Tj
Tstg
Value
1.3
175
–65...+175
Unit
W
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
RthJA
Value
110
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol Min Typ Max Unit
VF 1 V
Document Number 85607
Rev. 3, 01-Apr-99
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BZX85B...
Vishay Telefunken
Type
BZX85B...
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
VZnom 1)
V
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
IZT
mA
80
80
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
for VZT and
V
2.64 to 2.76
2.94 to 3.06
3.24 to 3.36
3.52 to 3.68
3.82 to 3.98
4.22 to 4.38
4.60 to 4.80
5.00 to 5.20
5.48 to 5.72
6.08 to 6.32
6.66 to 6.94
7.35 to 7.65
8.04 to 8.36
8.92 to 9.28
9.80 to 10.20
10.78 to 11.22
11.76 to 12.24
12.74 to 13.26
14.70 to 15.30
15.70 to 16.30
17.64 to 18.36
19.60 to 20.40
21.55 to 22.45
23.5 to 24.5
26.4 to 27.6
29.4 to 30.6
32.4 to 33.6
35.3 to 36.7
38.2 to 39.8
WrzjT
< 20
< 20
< 20
< 20
< 15
< 13
< 13
< 10
<7
<4
< 3.5
<3
<5
<5
<7
<8
<9
< 10
< 15
< 15
< 20
< 24
< 25
< 25
< 30
< 30
< 35
< 40
< 50
Wrzjk at IZK
mA
< 400 1
< 400 1
< 400 1
< 500 1
< 500 1
< 500 1
< 500 1
< 500 1
< 400 1
< 300 1
< 300 1
< 200 0.5
< 200 0.5
< 200 0.5
< 200 0.5
< 300 0.5
< 350 0.5
< 400 0.5
< 500 0.5
< 500 0.5
< 500 0.5
< 600 0.5
< 600 0.5
< 600 0.5
< 750 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
mIR at VR
AV
< 150 1
< 100 1
< 40 1
< 20 1
< 10 1
<3 1
<3 1
< 1 1.5
<1 2
<1 3
<1 4
< 1 4.5
< 1 6.2
< 1 6.8
< 0.5 7.5
< 0.5 8.2
< 0.5 9.1
< 0.5 10
< 0.5 11
< 0.5 12
< 0.5 13
< 0.5 15
< 0.5 16
< 0.5 18
< 0.5 20
< 0.5 22
< 0.5 24
< 0.5 27
< 0.5 30
TKVZ
%/K
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.07 to –0.02
–0.07 to –0.01
–0.03 to +0.04
–0.01 to +0.04
0 to +0.045
+0.01 to +0.055
+0.015 to +0.06
+0.02 to +0.065
0.03 to 0.07
0.035 to 0.075
0.04 to 0.08
0.045 to 0.08
0.045 to 0.085
0.05 to 0.085
0.055 to 0.09
0.055 to 0.09
0.06 to 0.09
0.06 to 0.09
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
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Document Number 85607
Rev. 3, 01-Apr-99

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BZX85B...
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
2.0 1000
1.6
1.2
l=4mm
0.8
l=20mm
l=10mm
0.4
0
–50
95 9612
0 50 100 150 200
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Tempera-
ture
250
200
150
ll
100
100
VR = 0V
VR = 2V
VR = 5V
VR = 20V
10 VR = 30V
f = 1 MHz
1 Tamb= 25°C
0 10 20 30 40 50 60
95 9616
VZ – Z-Voltage ( V )
Figure 3. Diode Capacitance vs. Z–Voltage
1000
IZ=1mA
100 2mA
5mA
10mA
20mA
10
50
0
0
95 9613
TL=constant
5 10 15 20 25
l – Lead Length ( mm )
30
Figure 2. Thermal Resistance vs. Lead Length
1000
1
1 10 100
95 9615
VZ – Z-Voltage ( V )
Figure 4. Differential Z–Resistance vs. Z–Voltage
tp/T=0.1
tp/T=0.02
tp/T=0.01
100
tp/T=0.5
tp/T=0.05
tp/T=0.2
DRTth=JAT=jm1a1x0–KT/aWmb
10
1
10–1
Single Pulse
100
101
iZM=(–VZ+(VZ2+4rzj DT/Zthp)1/2)/(2rzj)
102
95 9614
Figure 5. Thermal Response
tp – Pulse Length ( ms )
103
Document Number 85607
Rev. 3, 01-Apr-99
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BZX85B...
Vishay Telefunken
Dimensions in mm
technical drawings
according to DIN
specifications
0.85 max.
Cathode Identification
Standard Glass Case
54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3 g
26 min.
4.1 max.
26 min.
94 9368
2.5 max.
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Document Number 85607
Rev. 3, 01-Apr-99

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Ozone Depleting Substances Policy Statement
BZX85B...
Vishay Telefunken
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85607
Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
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