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BC140, 141
NPN Medium Power Transistors
Features:
NPN Silicon Power Switching Transistors.
Medium Power Amplifier and Switching Applications.
TO-39 Metal Can Package
Dimension
A
B
C
D
E
F
G
H
J
K
L
Minimum Maximum
8.50 9.39
7.74 8.50
6.09 6.60
0.40 0.53
- 0.88
2.41 2.66
4.82 5.33
0.71 0.86
0.73 1.02
12.70
-
42° 48°
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
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BC140, 141
NPN Medium Power Transistors
Absolute Maximum Ratings
Description
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Power Dissipation at Ta = 25ºC
Derate Above 25ºC
Power Dissipation at Tc = 25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC140
BC141
40 60
80 100
7.0
1.0
0.8
4.57
4.0
22.73
-65 to +200
Thermal Characteristics
Junction to Ambient in Free Air
Junction to Case
Rth(j-a)
Rth(j-c)
219
44
Units
V
A
W
mW/°C
°C
°C/W
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BC140, 141
NPN Medium Power Transistors
Electrical Characteristics (Ta = 25ºC unless specified otherwise)
Description
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Symbol
VCES
*VCEO
VEBO
Test Condition
IC = 100µA, VBE = 0
BC140
BC141
IC = 30mA, IB = 0
BC140
BC141
IE = 100µA, IC = 0
Minimum Typical Maximum Units
80 -
100
40 -
60
7-
-
V
-
-V
Collector Cut off Current
ICES
VCE = 60V, VBE = 0
VCE = 60V, VBE = 0, Ta = 150ºC
-
-
100 nA
100 µA
DC Current Gain
*hFE
IC = 100mA, VCE = 1V
BC140/BC141
Group-6
Group-10
Group-16
IC = 1A, VCE = 1V
BC140/BC141
Group-6
Group-10
Group-16
40
40
63
100
26
15
20
30
400
100
160
250
-
Collector Emitter Saturation Voltage *VCE(sat)
Base Emitter on Voltage
*VBE(on)
IC = 1A, IB = 0.1A
IC = 1A, VCE = 1V
- - 1.0
V
- - 2.0
Dynamic Characteristics
Transition Frequency
fT IC = 50mA, VCE = 10V, f = 20MHz 50
-
- MHz
Output Capacitance
Input Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz
Cib VEB = 0.5V, IC = 0, f = 1MHz
-
-
- 25
pF
- 80
Switching Characteristics
Turn On Time
Turn Off Time
ton IC = 150mA, IB1 = 7.5mA
toff IC = 150mA, IB1 = IB2 = 7.5mA
-
-
- 250
ns
- 850
*Pulsed : Pulse Duration 300µs, Duty Cycle 1%
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BC140, 141
NPN Medium Power Transistors
Specifications
Package
Part Number
TO-39
BC140-6
BC140-10
BC140-16
BC141-6
BC141-10
BC141-16
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BC140, 141
NPN Medium Power Transistors
Notes:
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