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J/SST108 Series
Vishay Siliconix
N–Channel JFETs
J108
J109
J110
PRODUCT SUMMARY
Part Number
J/SST108
J/SST109
J/SST110
VGS(off) (V)
–3 to –10
–2 to –6
–0.5 to –4
rDS(on) Max (W)
8
12
18
ID(off) Typ (pA)
20
20
20
tON Typ (ns)
4
4
4
SST108
SST109
SST110
FEATURES
D Low On-Resistance: J108 <8 W
D Fast Switching—tON: 4 ns
D Low Leakage: 20 pA
D Low Capacitance: 11 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST108 series is designed with high-performance
analog switching applications in mind. It features low
on-resistance, good off-isolation, and fast switching.
The SST108 series is comprised of surface-mount
devices featuring the lowest rDS(on) of any TO-236
(SOT-23) JFET device.
The TO-226AA (TO-92) plastic package provides a
low-cost option. Both the J and SST series are available
in tape-and-reel for automated assembly (see Packaging
Information). For similar products packaged in
TO-206AC (TO-52), see the 2N5432/5433/5434 data
sheet.
TO-226AA
(TO-92)
D1
S2
G3
Top View
J108, J109, J110
TO-236
(SOT-23)
D1
S2
3G
Top View
SST108 (I8)*
SST109 (I9)*
SST110 (I0)*
*Marking Code for TO-236
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
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J/SST108 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST108
J/SST109
J/SST110
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source
On-Resistance
Gate-Source
Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V 32 25 25 25
VDS = 5 V, ID = 1 mA
VDS = 15 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 10 V, ID = 10 mA
VDS = 5 V, VGS = 10 V
TA = 125_C
0.01
5
0.01
0.02
1.0
3 10 2
80 40
3
3
6 0.5 4
10
3 3
33
VGS = 0 V, VDS v 0.1 V
8 12 18
IG = 1 mA , VDS = 0 V
0.7
V
mA
nA
W
V
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Input
Noise Voltage
Switching
gfs
gos
rds(on)
Ciss
Crss
en
VDS = 5 V, ID = 10 mA, f = 1 kHz
VGS = 0 V, ID = 0 mA , f = 1 kHz
VDS = 0 V
VGS = 0 V
f = 1 MHz
SST
J Series
VDS = 0 V
VGS = 10 V
f = 1 MHz
SST
J Series
VDG = 5 V, ID = 10 mA
f = 1 kHz
17
0.6
60
60
11
11
3.5
mS
8 12 18 W
85 85 85
pF
15 15 15
nV
Hz
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 1.5 V, VGS(H) = 0 V
See Switching Diagram
3
1
4
18
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
ns
NIP
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Document Number: 70231
S-04028Rev. E, 04-Jun-01

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J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
20 1000
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 15 V, VGS = 0 V
16 800
On-Resistance vs. Drain Current
50
TA = 25_C
40
12 rDS
VGS(off) = 2 V
600 30
8
IDSS
400
4 200
00
0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
40
ID = 10 mA
rDS changes X 0.7%/_C
32
VGS(off) = 2 V
24
16
4 V
8 8 V
0
55 35 15 5
25 45 65 85 105 125
TA Temperature (_C)
Turn-On Switching
5
tr approximately independent of ID
VDD = 1.5 V, RG = 50
4 VGS(L) = 10 V
td(on) @ ID = 25 mA
3
td(on) @ ID = 10 mA
2
20
10
0
1
100
80
4 V
8 V
10
ID Drain Current (mA)
Output Characteristics
VGS(off) = 2 V
100
60
40
20
0
0
30
24
18
VGS = 0 V
0.2 V
0.4 V
0.6 V
0.8 V
24 6 8
VDS Drain-Source Voltage (V)
Turn-Off Switching
td(off) independent
of device VGS(off)
VDD = 1.5 V, VGS(L) = 10 V
tf
VGS(off) = 2 V
10
12 VGS(off) = 8 V
1 tr
6 td(off)
0
0 2 4 6 8 10
VGS(off) Gate-Source Cutoff Voltage (V)
Document Number: 70231
S-04028Rev. E, 04-Jun-01
0
0
5 10 15 20
ID Drain Current (mA)
25
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