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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T"a = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
ic
PD
Pd
TJ< Tstg
Value
300
300
5.0
500
1.0
8.0
2.5
20
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R<uc
RftJA
Max
50
125
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(IC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
c(l = 100 /uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
E(l = 10.0 yuAdc, ic_=_0>
Collector Cutoff Current
(Vcb = 200 Vdc, El = 0)
Emitter Cutoff Current
(V BE = 3.0 Vdc, Cl = 0)
ON CHARACTERISTICS! 1)
DC Current Gain
(lC = 1.0 mAdc, Vce = 10 Vdc)
c(l = 10 mAdc, VC e = 10 Vdc)
(lC = 30 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 20 mAdc, Ib = 2.0 mAdc)
Base-Emitter On Voltage
(lC = 20 mAdc, Vce = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
c(l = 10 mAdc, VC E = 20 Vdc, f = 20 MHz)
Collector-Base Capacitance
(Vcb = 20 Vdc, El = 0, f
10 MHz)
(1) Pulse Test: Pulse Width « 300 /±s. Duty Cycle « 2.0%
MPSW60
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
HIGH VOLTAGE
TRANSISTOR
PNP SILICON
Refer to MPSW92 for graphs.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
lEBO
Max
Unit
Vdc
/iAdc
/xAdc
hFE
v CE(sat)
v BE(on)
*T
Ccb
0.75
Vdc
Vdc
MHz
pF
2-269