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MXTA92
MXTA93
CASE 345-01, STYLE 1
SOT-89
HIGH VOLTAGE
TRANSISTOR
PNP SILICON
Refer to MPSA92 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol MPS-A92 MPS-A93
vCEO
vCBO
300
300
200
200
VE'BO
5.0
ic 500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
R 0JA
'Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Max
1.0
8.0
150
125
Unit
Watt
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
dC = 1.0 mAdc, Bl = 0)
'
MXTA92
MXTA93
Collector-Base Breakdown Voltage
(IC = 100 MAdc, El = 0)
MXTA92
MXTA93
Emitter-Base Breakdown Voltage
(IE = 100 /xAdc, cl = 0)
Collector Cutoff Current
(Vqb = 200 Vdc, El = 0)
(VCB = 160 Vdc, El = 0)
Emitter Cutoff Current
(Vbe = 3.0 Vdc, lc = 0)
ON CHARACTERISTICS) 1)
DC Current Gain
dC = 10 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
MXTA92
MXTA93
Both Types
Both Types
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
!CBO
'EBO
Min
300
200
300
200
5.0
-
hFE
25
40
Max
-
-
-
0.25
0.25
0.1
Unit
Vdc
Vdc
Vdc
^Adc
/uAdc
dC = 30 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 20 mAdc, Ib = 2.0 mAdc)
Base-Emitter Saturation Voltage
dC = 20 mAdc, Ib = 2.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 20 Vdc, El = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width =s 300 /us, Duty Cycle =s 2.0%.
MXTA92
MXTA93
MXTA92
MXTA93
MXTA92
MXTA93
v CE(sat)
v BE(sat)
h
Cc b
25
25
-
50
-
150
Vdc
0.5
0.5
0.9 Vdc
- MHz
pF
6.0
8.0
3-134