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T
BC160
BC161
CASE 79, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to 2N4033 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ Ta = 25°C
Derate above 25°C
Total Device Dissipation @Jq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, stg
BC BC
160 161
40 60
40 60
5
1
0.8
4.6
3.7
20
-65 to +200
Symbol
R^jc
RflJA
Max
35
200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
•°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwisenoted.)
c Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
•E = 0, VcES = -40 V for BC1 60
VcES = -60 VforBC161
VCES = -40 Vfor BC1 60 TA mb == 150°C
VCES = -60 Vfor BC161 TA mb == 150°C
Collector Emitter Breakdown Voltage
IC = -100 nA, =
for BC160
forBC161
Collector-Emitter Breakdown Voltage(1)
IC = -10 mA, Ib =
Emittor-Base Breakdown Voltage
IE = -100 nA, Ic =
for BC160
for BC161
Symbol
ices
V(BR)CES
V(BR)CE0
V(BR)EB0
-40
-60
-40
-60
-5
-100
-100
-100
-100
nA
HA
V
V
V
DC Current Gain(1)
IC = -100 mA, VcE = -1 V
for BC160, BC161
for BC160, BC161 Group 6
for BC160, BC161 Group 10
for BC160, BC161 Group 16
Collector-Emitter Saturation Voltage(1)
0c = -1 A, Ib = -0.1 A)
Base-Emitter Voltage(1)
dC = -1 A, VC E = -1 V)
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
dC = "50 mA, VCE = -10 V, f = 20 MHz
Input Capacitance
(Veb = -10 V, f = 1 MHz)
Output Capacitance
(Vcb = -10 V, = 0, f = 1 MHz)
Turn On Time
dC = -100 mA, BI 1 = -5 jiA)
Turn Off Time
(IC = "100 mA, Ib 1 = lB2 = -5 uA)
(1) Pulsed: Pulse Duration = 300 us, Duty Cycle = 1%
..
hFE
VCE(sat)
VBE(on)
fT
Qb
Cobo
Ton
T ff
40 400
40 100
63 160
100 250
-1
-1.7
50
180
30
500
650
V
V
MHz
pF
PF
ns
ns
4-206