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PNP Medium Power Transistor
Features:
•  PNP Silicon Power Switching Transistors
•  Medium Power Amplifier and Switching Applications
Pin Configuration
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specified)
Characteristic
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at TC = 25°C
Derate above 25°C
Operating Storage Temperature Range
Thermal Resistance
Junction to Ambient in Free Air
Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj, Tstg
Rth(j-a)
Rth(j-c)
BC160-16
BC161-16
40 60
5
1
0.8
4.57
4
22.73
-65 to +200
219
44
Unit
V
A
W
mW/°C
°C
°C/W
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PNP Medium Power Transistor
Electrical Characteristics:
(Ta = +25°C unless otherwise specified)
Parameter
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
Dynamic Characteristics
Symbol
Test Condition
Min.
VCES
*VCEO
IC = 100μA, VBE = 0
BC160-16
BC161-16
IC = 30mA, IB = 0
BC160-16
BC161-16
40
60
40
60
VEBO
ICES
*hFE
IE = 100μA, IC = 0
VCE = 40V, VBE = 0,
VCE = 60V, VBE = 0,
BC160-16
BC161-16
Ta = 150ºC
VCE = 40V, VBE = 0,
VCE = 60V, VBE = 0,
BC160-16
BC161-16
IC = 100mA, VCE = 1V
BC160-16/BC161-16
Group-6
Group-10
Group-16
IC = 1A, VCE = 1V
BC160-16/BC161-16
Group-6
Group-10
Group-16
5
-
40
40
63
100
-
*VCE(sat)
IC = 1A, IB = 0.1A
*VBE(on)
IC = 1A, VCE = 1V
Typ.
-
26
15
20
30
-
Max.
-
-
100
100
100
100
400
100
160
250
-
1
1.7
Unit
V
nA
μA
-
V
Transition Frequency
Output Capacitance
Input Capacitance
Switching Characteristics
fT IC = 50mA, VCE = 10V, f = 20MHz 50
- MHz
Cob
VCB = 10V, IE = 0, f = 1MHz
- 30
- pF
Cib VEB = 10V, IC = 0, f = 1MHz
180
Turn On Time
Turn Off Time
ton IC = 150mA, IB1 = 5μA
500
--
ns
toff IC = 100mA, IB1 = IB2 = 5μA
650
*Pulsed : Pulse Duration ≤300μs, Duty Cycle ≤1%
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PNP Medium Power Transistor
TO-39 Metal Can Package
Dim.
A
B
Min.
8.5
7.74
Max.
9.39
8.5
C 6.09
D 0.4
E-
6.6
0.53
0.88
F 2.41
G 4.82
H 0.71
2.66
5.33
0.86
J 0.73
K 12.7
L 42°
1.02
-
48°
Dimensions : Millimetres
Pin Configuration
1. Emitter
2. Base
3. Collector
Part Number Table
Description
Transistor, PNP, TO-39
Part Number
BC160-16
BC161-16
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
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22/10/12 V1.0