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J/SST111 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)
J/SST111
J/SST112
J/SST113
–3 to –10
–1 to –5
v–3
30
50
100
ID(off) Typ (pA)
5
5
5
tON Typ (ns)
4
4
4
J111 SST111
J112 SST112
J113 SST113
FEATURES
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-226AA (TO-92)
D1
S2
G3
Top View
J111
J112
J113
TO-236 (SOT-23)
D1
S2
3G
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
Power Dissipationa
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
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J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
J/SST111
Limits
J/SST112
J/SST113
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 5 V, ID = 1 mA
VDS = 15 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 15 V, ID = 10 mA
VDS = 5 V, VGS = 10 V
TA = 125_C
VGS = 0 V, VDS = 0.1 V
IG = 1 mA , VDS = 0 V
55 35
35
3 10 1
20 5
0.005
1
3
5
0.005
1
3
30
0.7
35
5
2
1
3
1
11
50 100
V
mA
nA
pA
nA
W
V
Common-Source Forward
Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
gfs
gos
rds(on)
Ciss
Crss
en
VDS = 20 V, ID = 1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = -10 V
f = 1 MHz
VDG = 10 V, ID = 1 mA
f = 1 kHz
6
25
7
3
3
mS
mS
30 50 100 W
12 12 12
pF
555
nV
Hz
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 10 V, VGS(H) = 0 V
See Switching Circuit
2
2
6
15
ns
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NCB
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7-2
Document Number: 70232
S-04028Rev. E, 04-Jun-01

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J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100 200
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
80
160
On-Resistance vs. Drain Current
100
TA = 25° C
80
60 rDS
IDSS
120
VGS(off) = 2 V
60
40 80
20 40
0
0 2 4
6 8
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
ID = 1 mA
rDS changes X 0.7%/_C
160
0
10
120 VGS(off) = 2 V
80
4 V
40 8 V
0
55 35
15 5 25 45 65
TA Temperature ( _C)
85 105 125
Turn-Off Switching
30
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = 10 V
24
40
20
0
1
5
4
3
2
4 V
8 V
10
ID Drain Current (mA)
Turn-On Switching
tr approximately independent of ID
VDD = 5 V, RG = 50
VGS(L) = 10 V
tr
td(on) @
ID = 12 mA
100
1 td(on) @
ID = 3 mA
0
0
30
24
2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
10
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18
12
6
0
0
tf @
VGS(off) = 2 V
td(off)
tf @
VGS(off) = 8 V
2 4 68
ID Drain Current (mA)
10
Document Number: 70232
S-04028Rev. E, 04-Jun-01
18
12
6
0
0
Ciss @ VDS = 0 V
Crss @ VDS = 0 V
4 8 12 16
VGS Gate-Source Voltage (V)
20
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