J113.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 J113 데이타시트 다운로드

No Preview Available !

J/SST111 Series
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)
J/SST111
J/SST112
J/SST113
–3 to –10
–1 to –5
v–3
30
50
100
ID(off) Typ (pA)
5
5
5
tON Typ (ns)
4
4
4
J111 SST111
J112 SST112
J113 SST113
FEATURES
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-226AA (TO-92)
D1
S2
G3
Top View
J111
J112
J113
TO-236 (SOT-23)
D1
S2
3G
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
Power Dissipationa
(TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
(TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
7-1

No Preview Available !

J/SST111 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
J/SST111
Limits
J/SST112
J/SST113
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 5 V, ID = 1 mA
VDS = 15 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
TA = 125_C
VDG = 15 V, ID = 10 mA
VDS = 5 V, VGS = 10 V
TA = 125_C
VGS = 0 V, VDS = 0.1 V
IG = 1 mA , VDS = 0 V
55 35
35
3 10 1
20 5
0.005
1
3
5
0.005
1
3
30
0.7
35
5
2
1
3
1
11
50 100
V
mA
nA
pA
nA
W
V
Common-Source Forward
Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
gfs
gos
rds(on)
Ciss
Crss
en
VDS = 20 V, ID = 1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = -10 V
f = 1 MHz
VDG = 10 V, ID = 1 mA
f = 1 kHz
6
25
7
3
3
mS
mS
30 50 100 W
12 12 12
pF
555
nV
Hz
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 10 V, VGS(H) = 0 V
See Switching Circuit
2
2
6
15
ns
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NCB
www.vishay.com
7-2
Document Number: 70232
S-04028Rev. E, 04-Jun-01

No Preview Available !

J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100 200
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
80
160
On-Resistance vs. Drain Current
100
TA = 25° C
80
60 rDS
IDSS
120
VGS(off) = 2 V
60
40 80
20 40
0
0 2 4
6 8
VGS(off) Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
ID = 1 mA
rDS changes X 0.7%/_C
160
0
10
120 VGS(off) = 2 V
80
4 V
40 8 V
0
55 35
15 5 25 45 65
TA Temperature ( _C)
85 105 125
Turn-Off Switching
30
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = 10 V
24
40
20
0
1
5
4
3
2
4 V
8 V
10
ID Drain Current (mA)
Turn-On Switching
tr approximately independent of ID
VDD = 5 V, RG = 50
VGS(L) = 10 V
tr
td(on) @
ID = 12 mA
100
1 td(on) @
ID = 3 mA
0
0
30
24
2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
10
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18
12
6
0
0
tf @
VGS(off) = 2 V
td(off)
tf @
VGS(off) = 8 V
2 4 68
ID Drain Current (mA)
10
Document Number: 70232
S-04028Rev. E, 04-Jun-01
18
12
6
0
0
Ciss @ VDS = 0 V
Crss @ VDS = 0 V
4 8 12 16
VGS Gate-Source Voltage (V)
20
www.vishay.com
7-3

No Preview Available !

J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Noise Voltage vs. Frequency
100
VDS = 10 V
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
500
40
10
ID = 1 mA
30 gfs gos
250
20
ID = 10 mA
10
1
10 100 1 k 10 k 100 k
f Frequency (Hz)
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
IGSS @ 125_C
TA = 125_C
ID = 10 mA
1 mA
1 mA
TA = 25_C
10 mA
IGSS @ 25_C
0
0 2 4 6 8
VGS(off) Gate-Source Cutoff Voltage (V)
Common-Gate Input Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gig
0
10
10
big
1
0.1 pA
0
6 12 18 24
VDG Drain-Gate Voltage (V)
30
Common-Gate Forward Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
gfg
bfg
10
gfg
1
0.1
100
200 500
f Frequency (MHz)
1000
Common-Gate Reverse Admittance
10
VDG = 10 V
ID = 10 mA
TA = 25_C
1.0 brg
grg
0.1
+grg
0.1
100
www.vishay.com
7-4
200 500
f Frequency (MHz)
1000
0.01
100
200 500
f Frequency (MHz)
1000
Document Number: 70232
S-04028Rev. E, 04-Jun-01

No Preview Available !

J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
VDG = 10 V
ID = 10 mA
TA = 25_C
bog
10
gog
1
0.1
100
200 500
f Frequency (MHz)
1000
Output Characteristics
40
VGS(off) = 4 V
32
VGS = 0 V
24 0.5
16
8
0
0
1.0
1.5
2.0
2.5
3.0
0.2 0.4 0.6 0.8
VDS Drain-Source Voltage (V)
1.0
SWITCHING TIME TEST CIRCUIT
J/SST111 J/SST112 J/SST113
VGS(L)
RL*
ID(on)
12 V
800 W
12 mA
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
7 V
1600 W
6 mA
5 V
3200 W
3 mA
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Output Characteristics
100
VGS(off) = 4 V
80
60 VGS = 0 V
0.5
40 1.0
1.5
20 2.0
2.5
0
0 2 4 6 8 10
VDS Drain-Source Voltage (V)
Transfer Characteristics
100
VGS(off) = 4 V
VDS = 20 V
80
TA = 55_C
60
25_C
40
20
0
0
125_C
1 2 3 4
VGS Gate-Source Voltage (V)
5
VDD
VGS(H)
VGS(L)
VGS
Scope
RL
OUT
1 kW 51 W
51 W
Document Number: 70232
S-04028Rev. E, 04-Jun-01
www.vishay.com
7-5