J174.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 J174 데이타시트 다운로드

No Preview Available !

J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174
J175
J176
J177
SST174
SST175
SST176
SST177
PRODUCT SUMMARY
Part Number
J/SST174
J/SST175
J/SST176
J/SST177
VGS(off) (V)
5 to 10
3 to 6
1 to 4
0.8 to 2.25
rDS(on) Max (W)
85
125
250
300
ID(off) Typ (pA)
–10
–10
–10
–10
tON Typ (ns)
25
25
25
25
FEATURES
D Low On-Resistance: J174 <85 W
D Fast Switching—tON: 25 ns
D Low Leakage: –10 pA
D Low Capacitance: 5 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
TO-226AA
(TO-92)
D1
G2
S3
Top View
J174
J175
J176
J177
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-236
(SOT-23)
D1
S2
3G
Top View
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1

No Preview Available !

J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C
Lead Temperature (1/16from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST174
J/SST175
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 15 V, ID = 10 nA
VDS = 15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 125_C
VDG = 15 V, ID = 1 mA
VDS = 15 V, VGS = 10 V
TA = 125_C
VGS = 0 V, VDS = 0.1 V
IG = 1 mA , VDS = 0 V
45 30
30
5 10 3
6
V
20 135 7 70 mA
0.01
1
1
5
0.01
0.01
1
nA
1
5
85 125 W
0.7
V
Common-Source
Forward Transconductance
Common-Source
Output Conductance
gfs
VDS = 15 V, ID = 1 mA
4.5
f = 1 kHz
gos 20
mS
mS
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
85 125 W
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Ciss
VDS = 0 V, VGS = 0 V, f = 1 MHz
20
Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz
5
pF
Equivalent Input Noise Voltage
en
VDG = 10 V, ID = 1 mA
f = 1 kHz
20
nV
Hz
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VGS(L) = 0 V, VGS(H) = 10 V
See Switching Circuit
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
10
15
10
20
ns
PSCIA
www.vishay.com
9-2
Document Number: 70257
S-04030Rev. E, 04-Jun-01

No Preview Available !

J/SST174/175/176/177 Series
Vishay Siliconix
SPECIFICATIONS FOR J/SST176 AND J/SST177 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST176
J/SST177
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
rDS(on)
VGS(F)
IG = 1 mA , VDS = 0 V
VDS = 15 V, ID = 10 nA
VDS = 15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 125_C
VDG = 15 V, ID = 1 mA
VDS = 15 V, VGS = 10 V
TA = 125_C
VGS = 0 V, VDS = 0.1 V
IG = 1 mA , VDS = 0 V
45
0.01
5
0.01
0.01
5
30
1
2
0.7
30
4 0.8 2.25
35 1.5 20
11
V
mA
nA
1 1
250 300 W
V
Common-Source
Forward Transconductance
Common-Source Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
gfs
gos
rds(on)
Ciss
Crss
en
VDS = 15 V, ID = 1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA , f = 1 kHz
VDS = 0 V, VGS = 0 V, f = 1 MHz
VDS = 0 V, VGS = 10 V
f = 1 MHz
VDG = 10 V, ID = 1 mA
f = 1 kHz
4.5
20
20
5
20
mS
mS
250 300 W
pF
nV
Hz
Switching
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VGS(L) = 0 V, VGS(H) = 10 V
See Switching Circuit
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
10
15
10
20
ns
PSCIA
Document Number: 70257
S-04030Rev. E, 04-Jun-01
www.vishay.com
9-3