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B-54
J201, J202
N-Channel Silicon Junction Field-Effect Transistor
01/99
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Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V(BR)GSS
IGSS
IG
VGS(OFF)
IDSS
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
g fs
g os
Ciss
Crss
Equivalent Short Circuit Input
Noise Voltage
N
J201 J202
Min Typ Max Min Typ Max Unit
– 40 – 40
V
– 100
– 100 pA
– 10 – 10 pA
– 0.3 – 1.5 – 0.8
–4 V
0.2
1 0.9
4.5 mA
Process NJ16
Test Conditions
IG = – 1µA, VDS = ØV
VGS = – 20V, VDS = ØV
VDG = 20V, ID = IDSS(min)
VDS = 20V, ID = 10 nA
VDSS = 15V, VGS = ØV
500
1
4
1
5
1000
3.5
4
1
5
µS VDS = 20V, VGS = ØV
µS VDS = 20V, VGS = ØV
pF VDS = 20V, VGS = ØV
pF VDS = 20V, VGS = ØV
nV/Hz VDS = 10V, VGS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ201, SMPJ202
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