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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX99 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 31
1999 Oct 20

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Philips Semiconductors
Voltage regulator diodes
Product specification
BZX99 series
FEATURES
Total power dissipation: max. 300 mW
Tolerance: ±5%
Working voltage range: nom. 2.4 to 15 V (E24 range)
Improved Iz/Vz characteristics at low currents
(Iz = 50 µA). This results in a noise free and sharp
breakdown knee.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
APPLICATIONS
General regulation functions, where low noise at low
currents is required
Low-power consumption applications (e.g. hand-held
applications).
DESCRIPTION
Low-power low noise voltage regulator diodes in small
SOT23 plastic SMD packages.
The diodes are available in the normalized E24 ±5%
tolerance range. The series consists of 20 types with
nominal working voltages from 2.4 to 15 V.
handbook, halfpag2e
1
Top view
3
2
n.c.
3
1
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE
NUMBER
BZX99-C2V4
BZX99-C2V7
BZX99-C3V0
BZX99-C3V3
BZX99-C3V6
MARKING
CODE
TYPE
NUMBER
XL BZX99-C3V9
XM BZX99-C4V3
XN BZX99-C4V7
XP BZX99-C5V1
XR BZX99-C5V6
MARKING
TYPE
CODE
NUMBER
XS BZX99-C6V2
XT BZX99-C6V8
XA BZX99-C7V5
XB BZX99-C8V2
XC BZX99-C9V1
MARKING TYPE
CODE
NUMBER
XD BZX99-C10
XE BZX99-C11
XU BZX99-C12
XV BZX99-C13
XW BZX99-C15
MARKING
CODE
XX
XY
XZ
X2
X3
1999 Oct 20
2

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Philips Semiconductors
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
IF
IZSM
Ptot
Tstg
Tj
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Total BZX99-C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
IR reverse current
BZX99-C2V4
BZX99-C2V7
BZX99-C3V0
BZX99-C3V3
BZX99-C3V6
BZX99-C3V9
BZX99-C4V3
BZX99-C4V7
BZX99-C5V1
BZX99-C5V6
BZX99-C6V2
BZX99-C6V8
BZX99-C7V5
BZX99-C8V2
BZX99-C9V1
BZX99-C10
BZX99-C11
BZX99-C12
BZX99-C13
BZX99-C15
CONDITIONS
IF = 10 mA; see Fig.4
IF = 100 mA; see Fig.4
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 3 V
VR = 3 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 7 V
VR = 8 V
VR = 9 V
VR = 10 V
VR = 10.5 V
Product specification
BZX99 series
MIN. MAX.
300
see Table 1
UNIT
mA
300 mW
65 +150 °C
150 °C
MAX.
0.9
1
UNIT
V
V
0.2 µA
0.05 µA
0.02 µA
2 µA
1 µA
0.5 µA
0.1 µA
2 µA
1 µA
1 µA
0.1 µA
0.01 µA
0.1 µA
0.2 µA
0.1 µA
0.1 µA
0.05 µA
0.05 µA
0.05 µA
0.01 µA
1999 Oct 20
3

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Philips Semiconductors
Voltage regulator diodes
Product specification
BZX99 series
Table 1 Per type BZX99-C2V4 to C15
Tj = 25 °C unless otherwise specified.
BZX99-C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 50 µA
Tol. ±5%
VOLTAGE
CHANGE
VZ(V)(1)
TEMP. COEFF.
SZ (mV/K)
IZtest = 50 µA
(see Figs 2 and 3)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
MIN.
MAX.
MAX.
TYP.
MAX.
MAX.
2V4
2.28 2.52 0.80
1.15
2V7
2.57 2.84 0.85
1.35
3V0
2.85 3.15 0.90
1.50
3V3
3.14 3.47 0.93
1.65
3V6
3.42 3.78 0.95
1.80
3V9
3.71 4.10 0.97
1.95
4V3
4.09 4.52 0.99
2.05
4V7
4.47 4.94 0.97
1.90
5V1
4.85 5.36 0.60
0.15
5V6
5.32 5.88 0.20
1.75
6V2
5.89 6.51 0.10
2.35
6V8
6.46 7.14 0.10
3.00
7V5
7.13 7.88 0.15
3.60
8V2
7.79 8.61 0.15
4.25
9V1
8.65 9.56 0.10
5.00
10
9.50
10.50
0.10
5.80
11
10.45
11.55
0.11
6.70
12
11.40
12.60
0.12
7.65
13
12.35
13.65
0.13
8.60
15
14.25
15.75
0.15
10.50
370 6.0
350 6.0
325 6.0
310 6.0
300 6.0
290 6.0
280 6.0
275 6.0
300 5.0
275 4.0
250 3.0
215 3.0
170 3.0
150 3.0
120 3.0
110 3.0
110 2.5
105 2.5
105 2.5
100 2.0
Note
1. VZ = VZ at 100 µA minus VZ at 10 µA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to solderpoint
Notes
1. Device mounted on an FR4 printed-circuit board.
2. Solderpoint of cathode tab.
CONDITIONS
note 1
note 2
VALUE
415
195
UNIT
K/W
K/W
1999 Oct 20
4

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Philips Semiconductors
Voltage regulator diodes
Product specification
BZX99 series
GRAPHICAL DATA
handbook, fu0ll pagewidth
Sz
(mV/K)
0.5
MGL741
C2V4
1
C3V0
1.5
C3V3
C3V6
C3V9
2 C4V3
C4V7
2.5
10
Tj = 25 to 150 °C.
102 Iz (µA)
Fig.2 Temperature coefficient as a function of working current; typical values.
103
12
handbook, halfpage
Sz
(mV/K)
8
4
0
C15
C12
C10
C8V2
C6V8
C6V2
C5V6
C5V1
MGL742
4
10
102
Iz (µA)
103
300
handbook, halfpage
IF
(mA)
200
100
0
0.6
MBG781
0.8 VF (V) 1.0
Tj = 25 to 150 °C.
Fig.3 Temperature coefficient as a function of
working current; typical values.
1999 Oct 20
Tj = 25 °C.
Fig.4 Forward current as a function of forward
voltage; typical values.
5