2N1132.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2N1132 데이타시트 다운로드

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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(R BE « 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation (a Ta = 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Total Device Dissipation (a 1q = 100°C
2N1132A
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCER
2N1132 2N1132A
35 40
< 50 *
Unit
Vdc
Vdc
vCBO
v EBO
"C
PD
Pd
pd
50 60
|
< 5.0 >
< 600 >
< 600 *
< 3.43 >
< 2.0
« 11.43
< 1.0 >
Vdc
Vdc
mA
mW
mW/°C
Watts
mW/t
Watts
TJ- Tstg
-65 to +200
°C
2N1132 A
r
JAN AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R 0JC
R 0JA
Max
87.49
291.55
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mA)
2N1132A
2N1132
Collector-Base Breakdown Voltage
flC = 100 juAdc, Ie = 0)
2N1132,
2N1132A
Emitter-Base Breakdown Voltage
(IE = 100 juAdc, lc = 0)
(IE = 1.0 mA, cl = 0)
2N1132,
2N1132A
Collector Cutoff Current
(VCB = 30 Vdc, El = 0)
(VCB = 50 Vdc, l E = 0)
(VcB = 30 Vdc, El = 0, TA = 150°C)
(VcB = 45 Vdc, Ie = 0)
(VcB = 45 Vdc, El = 0, TA = 150°C)
Collector Cutoff Current
(Vqe = 50 V, R B e = « 10 Ohms)
Emitter Cutoff Current
(V B e = 5.0 Vdc, lc = 0)
(V B E = 2.0 Vdc, Cl = 0)
ON CHARACTERISTICSdl
2N1132
2N1132
2N1132
2N1132A
2N1132A
2N1132
2N1132A
2N1132A
2N1132
DC Current Gain
dC = 5.0 mAdc, Vqe = 10 Vdc)
(lC = 150 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltage
dC = 150 mAdc, Ib = 15 mAdc)
Refer to 2N2904 for graphs.
Symbol
v (BR)CE0
v (BR)CB0
v (BR)EBO
!CBO
Min
40
35
50
60
5.0
5.0
-
'CER
'EBO
-
h FE
v CE(sat)
v BE(sat)
25
30
Max
-
-
1.0
100
100
0.5
50
10
10
100
100
90
1.5
1.3
Unit
Vdc
Vdc
Vdc
/uAdc
mA
mA
/iAdc
Vdc
Vdc
4-19

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2N1132,A
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
flC = 50 mAdc, Vqe = 10 Vdc, f = 20 MHz)
fT
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 1.0 MHz)
(VC B = 10 Vdc, Ie = 0, f = 1.0 MHz)
2N1132,
2N1132A
c obo
Input Capacitance
(Vbe = 0.5 Vdc, lc = 0,f i= 1.0 kHz)
(V BE = 0.5 Vdc, lc = 0, f = 1.0 MHz)
2N1132,
2N1132A
Cjbo
Input Impedance
dC = 10 mAdc, Vcb = 5.0 Vdc, f = 1.0 kHz
dC = 5.0 mAdc, Vcb = 10 Vdc, f = 1.0 kHz
"ib
Voltage Feedback Ratio
dC = 5.0 mAdc, V C e = 5.0 Vdc, f = 1.0 kHz)
dC = 5.0 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
"rb
Small-Signal Current Gain
flC = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
2N1132,
2N1132A
hfe
dC = 5.0 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
Output Admittance
=dC = 1.0 mAdc, Vce 5.0 Vdc, f = 1.0 kHz)
dC = 5.0 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-OffTime
(1) Pulse Test: Pulse Width « 300 fis, Duty Cycle =s 2.0%.
2N1132,
2N1132A
2N1132A
2N1132A
hob
ton
*off
Min
60
-
-
25
-
25
25
30
30
-
'
-
Max
45
30
80
80
35
10
8.0
8.0
100
75
Unit
MHz
PF
PF
Ohms
X 10" 4
/tmhos
1.0
5.0
45 ns
35 ns
FIGURE 1 SWITCHING TIMES TEST CIRCUIT
-7.5 V I
PW = 150 ns
t <2.0 ns
r
Duty Cycle ^2.0%
4-20