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Small Signal Zener Diodes
BZT52-V-Series
Vishay Semiconductors
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common cathode
configuration in the SOT-23 case with type
designation DZ23 series.
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Zener current see table
" Characteristics "
Power dissipation
Power dissipation
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1) Valid provided that electrodes are kept at ambient temperature
Symbol
Ptot
Ptot
Symbol
RthJA
TJ
TS
17431
Value
500 2)
410 1)
Unit
mW
mW
Value
300 1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range1)
Part number
Marking
code
VZ at IZT1
Dynamic resistance
rzj at IZT1
rzj at IZT2
VΩ
BZT52C2V4-V
BZT52C2V7-V
BZT52C3V0-V
BZT52C3V3-V
BZT52C3V6-V
BZT52C3V9-V
BZT52C4V3-V
BZT52C4V7-V
BZT52C5V1-V
BZT52C5V6-V
BZT52C6V2-V
BZT52C6V8-V
BZT52C7V5-V
BZT52C8V2-V
BZT52C9V1-V
BZT52C10-V
BZT52C11-V
BZT52C12-V
BZT52C13-V
BZT52C15-V
BZT52C16-V
BZT52C18-V
BZT52C20-V
BZT52C22-V
BZT52C24-V
BZT52C27-V
BZT52C30-V
BZT52C33-V
BZT52C36-V
BZT52C39-V
BZT52C43-V
BZT52C47-V
BZT52C51-V
BZT52C56-V
BZT52C62-V
BZT52C68-V
BZT52C75-V
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
min.
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
max.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135(2)
< 150(2)
< 200(2)
< 250(2)
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000(3)
< 1000(3)
< 1000(3)
< 1500(3)
IZT1 = 5 mA, IZT2 = 1 mA
(1) Measured with pulses Tp = 5 ms
(2) = IZT1 = 2.5 mA
(3) = IZT2 = 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature.
Test
current
IZT1
mA
Temp.
coefficient
at IZT1
αVZ
(10-4/°C)
Reverse
voltage
VR at IR
=
100 nA,
Admissible zener
current4)
IZ at
Tamb =
45 °C,
IZ at
Tamb =
25 °C,
V mA
5 - 9 to - 4 -
-
5 - 9 to - 4 - 113
5 - 9 to - 3 - 98
5 - 8 to - 3 - 92
5 - 8 to - 3 - 85
5 - 7 to - 3 - 77
5 - 6 to - 1 - 71
5 - 5 to +2 - 64
5
- 3 to +4
> 0.8
56
5 - 2 to +6 > 1 50
5 - 1 to +7 > 2 45
5
+ 2 to +7
>3
41
5
+ 3 to +7
>5
37
5
+ 4 to +7
>6
34
5
+ 5 to +8
>7
30
5
+ 5 to +8
> 7.5
28
5
+ 5 to +9
> 8.5
25
5
+ 6 to +9
>9
23
5
+ 7 to +9
> 10
21
5
+ 7 to +9
> 11
19
5 + 8 to +9.5 > 12 17
5 + 8 to +9.5 > 14 15
5 + 8 to +10 > 15 14
5 + 8 to +10 > 17 13
5 + 8 to +10 > 18 11
5 + 8 to +10 > 20 10
5
+ 8 to +10 > 22.5
9
5 + 8 to +10 > 25 8
5 + 8 to +10 > 27 8
5 + 10 to +12 > 29
7
5 + 10 to +12 > 32
6
5 + 10 to +12 > 35
5
5 + 10 to +12 > 38
5
2.5 typ. +10(2)
-
-
2.5 typ. +10(2)
-
-
2.5 typ. +10(2)
-
-
2.5 typ. +10(2)
-
-
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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BZT52-V-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
range1)
Dynamic resistance
Part number
Marking
code
VZ at IZT1
V
rzj at IZT1
rzj at IZT2
Ω
BZT52B2V4-V
BZT52B2V7-V
BZT52B3V0-V
BZT52B3V3-V
BZT52B3V6-V
BZT52B3V9-V
BZT52B4V3-V
BZT52B4V7-V
BZT52B5V1-V
BZT52B5V6-V
BZT52B6V2-V
BZT52B6V8-V
BZT52B7V5-V
BZT52B8V2-V
BZT52B9V1-V
BZT52B10-V
BZT52B11-V
BZT52B12-V
BZT52B13-V
BZT52B15-V
BZT52B16-V
BZT52B18-V
BZT52B20-V
BZT52B22-V
BZT52B24-V
BZT52B27-V
BZT52B30-V
BZT52B33-V
BZT52B36-V
BZT52B39-V
BZT52B43-V
BZT52B47-V
BZT52B51-V
BZT52B56-V
BZT52B62-V
BZT52B68-V
BZT52B75-V
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
min.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135(2)
< 150(2)
< 200(2)
< 250(2)
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000(3)
< 1000(3)
< 1000(3)
< 1500(3)
IZT1 = 5 mA, IZT2 = 1 mA
1) Measured with pulses Tp = 5 ms
2) = IZT1 = 2.5 mA
3) = IZT2 = 0.5 mA
4) Valid provided that electrodes are kept at ambient temperature.
Test
current
IZT1
mA
Temp.
coefficient
at IZT1
αVZ
(10-4/°C)
Reverse
voltage
VR at IR
=
100 nA,
Admissible zener
current 4)
IZ at
Tamb =
45 °C,
IZ at
Tamb =
25 °C,
V mA
5 - 9 to - 4 -
-
5 - 9 to - 4 - 113
5 - 9 to - 3 - 98
5 - 8 to - 3 - 92
5 - 8 to - 3 - 85
5 - 7 to - 3 - 77
5 - 6 to - 1 - 71
5 - 5 to + 2 -
64
5
- 3 to + 4 > 0.8
56
5
- 2 to + 6
>1
50
5
- 1 to + 7
>2
45
5
+ 2 to + 7
>3
41
5
+ 3 to + 7
>5
37
5
+ 4 to + 7
>6
34
5
+ 5 to + 8
>7
30
5
+ 5 to + 8 > 7.5
28
5
+ 5 to + 9 > 8.5
25
5
+ 6 to + 9
>9
23
5
+ 7 to + 9
> 10
21
5
+ 7 to + 9
> 11
19
5 + 8 to + 9.5 > 12 17
5 + 8 to + 9.5 > 14 15
5 + 8 to + 10 > 15 14
5 + 8 to + 10 > 17 13
5 + 8 to + 10 > 18 11
5 + 8 to + 10 > 20 10
5 + 8 to + 10 > 22.5 9
5 + 8 to + 10 > 25
8
5 + 8 to + 10 > 27
8
5 + 10 to + 12 > 29
7
5 + 10 to + 12 > 32
6
5 + 10 to + 12 > 35
5
5 + 10 to + 12 > 38
5
2.5 typ. + 10(2)
-
-
2.5 typ. + 10(2)
-
-
2.5 typ. + 10(2)
-
-
2.5 typ. + 10(2)
-
-
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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BZT52-V-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
mA
103
102
IF 10
1
TJ = 100 °C
10-1
TJ = 25 °C
10-2
10-3
10-4
10-5
0
18114
0.2 0.4 0.6 0.8
VF
Figure 1. Forward characteristics
1V
1000
5
4
3
rzj 2
100
5
4
3
2
TJ = 25 °C
100
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Figure 4. Dynamic Resistance vs. Zener Current
mW
500
400
Ptot
300
200
100
0
0
18888
100
Tamb
200 °C
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
pF
1000
7
Ctot
5
4
3
VR = 1 V
2
V =2V
R
TJ = 25 °C
100
7 V =1V
R
5
4
VR = 2 V
3
2
10
1
18118
2 3 45
10 2 3 4 5 100 V
V at I = 5 mA
ZZ
Figure 5. Capacitance vs. Zener Voltage
°C/W
103
7
RthA
5
4
3
2
0.5
102 0.2
7 0.1
5
4 0.05
3 0.02
2 0.01
10
7
5
4
3
2
V=0
1
10-5 10-4
10-3
18116
tp tp
T
T
10-2 10-1
tp
PI
1 10s
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Ω
100
5
4
rzj
3
2
10
TJ = 25 °C
33
27
22
18
5
4
3
2
1
0.1
18119
2
51 2
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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BZT52-V-Series
Vishay Semiconductors
Ω 103
7
5
4
Rzj 3
2
47 + 51
43
39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1 2 3 4 5 10
IZ mA
Figure 7. Dynamic Resistance vs. Zener Current
Ω
103
Rzth
5
4
3
2
102
5
4
3
2
R = R x V x ΔVZ
ΔTzth thA Z
j
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Figure 8. Thermal Differential Resistance vs. Zener Voltage
mV/°C
25
ΔVZ 20
ΔTj 15
10
5 mA
IZ = 1 mA
20 mA
5
0
-5
1
18135
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
V 27 V, I = 2 mA
Figure 10. Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
0.7
0.6
ΔVZ 0.5
0.4
0.3
0.2
0.1
VZ at IZ = 5 mA
25 15
10
8
7
6.2
5.9
5.6
0
-1
- 0.2
0
18124
5.1
3.6 4.7
20 40 60 80 100 120 140 C
T
j
Figure 11. Change of Zener Voltage vs. Junction Temperature
Ω
100
7
5
4
Rzj 3
2
10
7
5
4
3
2
1
1
18122
2 3 45
TIZj
=
=
25 °C
5 mA
10 2 3 4 5 100 V
VZ
Figure 9. Dynamic Resistance vs. Zener Voltage
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18136
20 40 60
80 100 V
VZ at IZ = 2 mA
Figure 12. Temperature Dependence of Zener Voltage vs.
Zener Voltage
Document Number 85760 For technical questions within your region, please contact one of the following:
Rev. 1.6, 26-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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