SSF3028C1.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 SSF3028C1 데이타시트 다운로드

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Main Product Characteristics:
VDSS
30V
RDS(on) 28mohm(typ.)
ID 21A
Features and Benefits:
TO-252
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175operating temperature
SSF3028C1
Marking and pin Schematic diagram
Assignment
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
21
15
84
28
1.2
30
± 20
30
14
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version : 1.0
page 1 of 6

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Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
30
1
Typ.
28
40
1.11
5.2
2.1
1.2
5
8
17
13
450
110
35
Max.
35
50
3
1
50
100
-100
Units
V
V
μA
nA
nC
nS
pF
SSF3028C1
Max.
4.5
60
Units
/W
/W
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 7A
VGS=4.5V,ID = 5A
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 30V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 7.5A,
VDS=15V,
VGS = 4.5V
VGS=10V, VDS =15V,
RL=15Ω,
RGEN=6Ω
ID =1A
VGS = 0V
VDS = 15V
ƒ =1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
21
— — 84
— 0.72 1.2
— 21 —
— 25.2 —
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.1A, VGS=0V
TJ = 25°C, IF =21A, di/dt =
100A/μs
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version : 1.0
page 2 of 6

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Test circuits and Waveforms
SSF3028C1
Switch Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C.
These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version : 1.0
page 3 of 6

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Mechanical Data
SSF3028C1
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version : 1.0
page 4 of 6

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Ordering and Marking Information
Device Marking: 3028C1
Package (Available)
DPAKTO-252
Operating Temperature Range
C : -55 to 150 ºC
SSF3028C1
Devices per Unit
Reliability Test Program
Test Item Conditions
High
Tj=150@ 80% of
Temperature Max VDSS/VCES/VR
Reverse
Bias(HTRB)
High
Tj=150
Temperature @ 100% of Max VGSS
Gate
Bias(HTGB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version : 1.0
page 5 of 6