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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BZT52C2V4S-BZT52CS ZENER DIODE
FEATURES
z Planar die construction
z 200mW power dissipation on ceramic PBC
z General purpose, medium current
z Ideally suited for automated assembly processes
z Available in lead free version
SOD-323
Marking:
XX= Device code, see table on page2 the marking code
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device .
Maximum Ratings (Ta=25unless otherwise specified )
Characteristic
Forward Voltage (Note 2) @ IF = 10mA
Power Dissipation(Note 1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VF
PD
RθJA
Tj
Tstg
Value
0.9
200
625
150
-55~+150
Unit
V
mW
/W
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ELECTRICAL CHARACTERISTICS
Ta=25unless otherwise specified
TYPE
Marking
Zener Voltage Range (Note 2)
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52C4V7S
BZT52C5V1S
BZT52C5V6S
BZT52C6V2S
BZT52C6V8S
BZT52C7V5S
BZT52C8V2S
BZT52C9V1S
BZT52C10S
BZT52C11S
BZT52C12S
BZT52C13S
BZT52C15S
BZT52C16S
BZT52C18S
BZT52C20S
BZT52C22S
BZT52C24S
BZT52C27S
BZT52C30S
BZT52C33S
BZT52C36S
BZT52C39S
BZT52C43S
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
WU
Nom(V)
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
VZ@IZT
Min(V)
2.20
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40. 0
Max(V)
2.60
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
IZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
Maximum Zener Impedance
(Note 3)
ZZT@IZT
ZZK@IZK
100 600
100 600
95 600
95 600
90 600
90 600
90 600
80 500
60 480
40 400
10 150
15 80
15 80
15 80
15 100
20 150
20 150
25 150
30 170
30 200
40 200
45 225
55 225
55 250
70 250
80 300
80 300
80 325
90 350
130 350
100 700
IZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1
Maximum
Reverse
Current
(Note 2)
IR VR
μA V
50 1.0
20 1.0
10 1.0
5 1.0
5 1.0
3 1.0
3 1.0
3 2.0
2 2.0
1 2.0
3 4.0
2 4.0
1 5.0
0.7 5.0
0.5 6.0
0.2 7.0
0.1 8.0
0.1 8.0
0.1 8.0
0.1 10.5
0.1 11.2
0.1 12.6
0.1 14.0
0.1 15.4
0.1 16.8
0.1 18.9
0.1 21.0
0.1 23.1
0.1 25.2
0.1 27.3
0.1 32
Typical
Temperature
Coefficient
@IZTC mV/
Min Max
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0.2
-2.7 1.2
-2 2.5
0.4 3.7
1.2 4.5
2.5 5.3
3.2 6.2
3.8 7.0
4.5 8.0
5.4 9.0
6.0 10.0
7.0 11.0
9.2 13
10.4 14
12.4 16
14.4 18.0
16.4 20.0
18.4 22.0
21.4 25.3
24.4 29.4
27.4 33.4
30.4 37.4
33.4 41.2
10 12
Test
Current
IZTC
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
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Typical Characteristics
Zener Characteristics(V Up to 10 V)
Z
100
Ta =25
Pulsed
PD =200mW
10
100
Ta =25
Pulsed
Zener Characteristics(11 V to 43 V)
PD =200mW
10
1
0.5
12345678
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
40
TYPICAL Ta VALUES
35 FOR BZT52CXXXS SERIES
9
30
10 11
25
20 VZ @ IZT
15
10
5
0
-5
0 4 8 12 16 20 24 28 32 36 40 44
VZ, NOMINAL ZENER VOLTAGE (V)
Typical Capacitance
1000
Ta=25
f=1MHz
0V BIAS
100
1V BIAS
10 BIAS AT
50% OF VZ NOM
1
0.5
10 15 20 25 30 35 40 45 50
VZ, ZENER VOLTAGE (V)
Typical Leakage Current
100
Pulsed
10
1
0.1
0.01
Ta=100
1E-3
1E-4
0
1000
Ta=25
5 10 15 20 25 30 35 40
VZ, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
IZ=1mA
Ta=25
IZ(AC)=0.1IZ(DC)
f=1kHz
45
100
IZ=5mA
10
1
1 10
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
250
100
200
150
100
50
0
0
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25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
150
3
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
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SOD-323 Package Outline Dimensions
SOD-323 Suggested Pad Layout
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SOD-323 Tape and Reel
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