BZT52C8V2S.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 BZT52C8V2S 데이타시트 다운로드

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Plastic-Encapsulate Diodes
ZENER DIODES
FEATURES
Planar die construction
General purpose, Medium current
Ideally suited for automated assembly processes
Available in Lead free version
BZT52C2V0S---BZT52C39S
-+
SOD-323
Maximum Ratings @ Ta=25unless otherwise specified
Characteristic
Forward Voltage
@ IF=10mA
Symbol
VF
Value
0.9
Power Dissipation
Pd 200
Thermal resistance,junction to ambient air RθjA 625
Junction temperature
Tj 150
Storage temperature range
Tstg -65-150
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Short duration test pulse used in minimize self-heating effect.
3. f = 1KHz.
Unit
V
mW
/W
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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Plastic-Encapsulate Diodes
BZT52C2V0S---BZT52C39S
Electrical Characteristics (Ta = 25 unless otherwise specified )
Type Number
Marking
Code
Zener Voltage Range
VZ@IZT
Maximum Zener
Impedance
IZT ZZT@IZT ZZK@IZK IZK
Maximum
Temperature Coefficient
Reverse
of zener voltage @
IRCurre@nVt R
IZTC mV/
Nom(V) Min(V) Max(V) mA
mA μA V Min
Max
BZT52C2V0S
WY
2.0 1.91 2.09 5 100
600 1.0 150 1.0 -3.5
0
BZT52C2V4S
WX
2.4 2.2 2.60 5 100
600 1.0 50 1.0 -3.5
0
BZT52C2V7S
W1
2.7 2.5 2.9 5 100
600 1.0 20 1.0 -3.5
0
BZT52C3V0S
W2
3.0
2.8
3.2 5
95
600 1.0 10 1.0 -3.5
0
BZT52C3V3S
W3
3.3
3.1
3.5 5
95
600 1.0 5 1.0 -3.5
0
BZT52C3V6S
W4
3.6
3.4
3.8 5
90
600 1.0 5 1.0 -3.5
0
BZT52C3V9S
W5
3.9
3.7
4.1 5
90
600 1.0 3 1.0 -3.5
0
BZT52C4V3S
W6
4.3
4.0
4.6 5
90
600 1.0 3 1.0 -3.5
0
BZT52C4V7S
W7
4.7
4.4
5.0 5
80
500 1.0 3 2.0 -3.5
0.2
BZT52C5V1S
W8
5.1
4.8
5.4 5
60
480 1.0 2 2.0 -2.7
1.2
BZT52C5V6S
W9
5.6
5.2
6.0 5
40
400 1.0 1 2.0 -2.0
2.5
BZT52C6V2S
WA
6.2
5.8
6.6 5
10
150 1.0 3 4.0 0.4
3.7
BZT52C6V8S
WB
6.8
6.4
7.2 5
15
80 1.0 2 4.0 1.2
4.5
BZT52C7V5S
WC
7.5
7.0
7.9 5
15
80 1.0 1 5.0 2.5
5.3
BZT52C8V2S
WD
8.2
7.7
8.7 5
15
80 1.0 0.7 5.0 3.2
6.2
BZT52C9V1S
WE
9.1
8.5
9.6 5
15
100 1.0 0.5 6.0 3.8
7.0
BZT52C10S
WF
10 9.4 10.6 5 20
150 1.0 0.2 7.0 4.5
8.0
BZT52C11S
WG
11 10.4 11.6 5 20
150 1.0 0.1 8.0 5.4
9.0
BZT52C12S
WH
12 11.4 12.7 5 25
150 1.0 0.1 8.0 6.0
10.0
BZT52C13S
WI
13 12.4 14.1 5 30
170 1.0 0.1 8.0 7.0
11.0
BZT52C15S
WJ
15 13.8 15.6 5 30
200 1.0 0.1 10.5 9.2
13.0
BZT52C16S
WK
16 15.3 17.1 5 40
200 1.0 0.1 11.2 10.4
14.0
BZT52C18S
WL
18 16.8 19.1 5 45
225 1.0 0.1 12.6 12.4
16.0
BZT52C20S
WM
20 18.8 21.2 5 55
225 1.0 0.1 14.0 14.4
18.0
BZT52C22S
WN
22 20.8 23.3 5 55
250 1.0 0.1 15.4 16.4
20.0
BZT52C24S
WO
24 22.8 25.6 5 70
250 1.0 0.1 16.8 18.4
22.0
BZT52C27S
WP
27 25.1 28.9 2 80
300 0.5 0.1 18.9 21.4
25.3
BZT52C30S
WQ
30 28.0 32.0 2 80
300 0.5 0.1 21.0 24.4
29.4
BZT52C33S
WR
33 31.0 35.0 2 80
325 0.5 0.1 23.1 27.4
33.4
BZT52C36S
WS
36 34.0 38.0 2 90
350 0.5 0.1 25.2 30.4
37.4
BZT52C39S
WT
39 37.0 41.0 2 130
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
350 0.5 0.1 27.3 33.4
41.2
2. Tested with pulses, period=5ms, pulse width = 300μs.
3. f = 1KHz.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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BZT52C2V0S---BZT52C39S
Typical Characteristics
Plastic-Encapsulate Diodes
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P3-P3