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2N6116-2N6118
High-reliability discrete products
and engineering services since 1977
SILICON PROGRAMMABLE UNIJUNCTION
TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Repetitive peak forward current
100µs pulse width, 1.0% duty cycle
20µs pulse width, 1.0% duty cycle
Non repetitive peak forward current
10µs pulse width
DC forward anode current
Derate above 25°C
DC gate current
Gate to cathode forward voltage
Gate to cathode reverse voltage
Gate to anode reverse voltage
Anode to cathode voltage
Forward power dissipation @ TA = 25°C
Derate above 25°C
Operating junction temperature range
Storage temperature range
Symbol
ITRM
ITSM
IT
IG
VGKF
VGKR
VGAR
VAK
PF
1/ӨJA
TJ
Tstg
Value
1.0
2.0
5.0
200
2.0
±20
40
5.0
40
±40
250
2.5
-55 to 125
-65 to 200
Unit
Amp
Amp
mA
mA/°C
mA
Volt
Volt
Volt
Volt
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Offset voltage
(VS = 10Vdc, RG = 1.0MΩ)
(VS = 10Vdc, RG = 10kΩ)
2N6116
2N6117
2N6118
All types
0.2 0.70 1.6
VT 0.2 0.50 0.6 Volts
0.2 0.40 0.6
0.2 0.35 0.6
Gate to anode leakage current
(VS = 40Vdc, TA = 25°C, cathode open)
(VS = 40Vdc, TA = 75°C, cathode open)
IGAO - 1.0 5.0 nAdc
- 30 75
Gate to cathode leakage current
(VS = 40Vdc, anode to cathode shorted)
IGKS - 5.0 50 nAdc
Peak current
(VS = 10Vdc, RG = 1MΩ)
(VS = 10Vdc, RG = 10kΩ)
2N6116
2N6117
2N6118
2N6116
2N6117
2N6118
- 1.25 2.00
- 0.19 0.30
lp
-
0.08 0.15
µA
- 4.00 5.00
- 1.20 2.00
- 0.70 1.00
Rev. 20150504

No Preview Available !

2N6116-2N6118
High-reliability discrete products
and engineering services since 1977
SILICON PROGRAMMABLE UNIJUNCTION
TRANSISTORS
ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max Unit
Valley current
(VS = 10Vdc, RG = 1MΩ)
(VS = 10Vdc, RG = 10kΩ)
2N6116, 2N6117
2N6118
2N6116
2N6117, 2N6118
IV
- 18 50
- 18 25
70 270
-
50 270
-
µA
Forward voltage
(IF = 50mA peak)
VF - 0.8 1.5 Volts
Peak output voltage
(VB = 20Vdc, CC = 0.2µF)
VO 6.0 16
- Volts
Pulse voltage rise time
(VB = 20Vdc, CC = 0.2µF)
tr - 40 80 ns
MECHANICAL CHARACTERISTICS
Case TO-18
Marking
Body painted, alpha-numeric
Pin out
See below
TO-18
Dim Inches
Millimeters
Min Max Min Max
CD 0.178 0.195 4.520 4.950
CH 0.140 0.210 3.556 5.330
HD 0.209 0.230 5.310 5.840
LC 0.100 TP
2.540 TP
LD 0.016 0.021 0.410 0.530
LL 0.500 0.750 12.700 19.050
LU 0.016 0.019 0.410 0.480
L1 - 0.050 - 1.270
L2 0.250 - 6.350
-
P 0.100 - 2.540
-
Q - 0.040 - 1.020
TL 0.028 0.048 0.710 1.220
TW 0.036 0.046 0.910 1.170
α 45°TP
45°TP
Rev. 20150504

No Preview Available !

High-reliability discrete products
and engineering services since 1977
2N6116-2N6118
SILICON PROGRAMMABLE UNIJUNCTION
TRANSISTORS
Rev. 20150504

No Preview Available !

High-reliability discrete products
and engineering services since 1977
2N6116-2N6118
SILICON PROGRAMMABLE UNIJUNCTION
TRANSISTORS
Rev. 20150504

No Preview Available !

High-reliability discrete products
and engineering services since 1977
2N6116-2N6118
SILICON PROGRAMMABLE UNIJUNCTION
TRANSISTORS
Rev. 20150504