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LV30100PT
Rev.E Mar.-2016
描述 / Descriptions
TO-3P 塑封封装 肖特基二极管。
Schottky Barrier Diode in a TO-3P Plastic Package.
DATA SHEET
特征 / Features
低正向压降,低功耗,高效率。
Low forward voltage drop,low power losses,High efficiency operation.
用途 / Applications
用于高频逆变器,开关电源,续流二极管,OR-ing 二极管,DC-DC 转换器和电池反向保护。
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode,
dc-to-dc converters and reverse battery protection.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
PIN1Anode PIN 2Cathode PIN 3Anode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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LV30100PT
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Rectified Forward Current
Non Repetitive Peak Surge Current
Thermal Resistance Junction to Case
Junction and Storage Temperature Range
符号
Symbol
VRM
VRSM
VDC
VRMS
IF(AV)
IFSM
RθJc
Tj Tstg
DATA SHEET
数值
Rating
100
70
2×15
200
1.4
-40+150
单位
Unit
V
V
A
A
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
Breakdown Voltage
VBR IR=1mA(Ta=25)
100
V
IF =7.5A(Ta=25)
0.57 0.65
V
Forward Voltage
VF
IF =7.5A(Ta=125)
IF =15A(Ta=25)
0.52 0.60
0.73 0.80
V
V
IF =15A(Ta=125)
0.62 0.68
V
Instantaneous Reverse Current
IRNote 1
VR=100V(Ta=25)
VR=100V(Ta=125)
150 μA
13 25 mA
注/Notes
1. 使用极短的测试时间,以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明,数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip.
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LV30100PT
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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