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LV30200PT
Rev.F Mar.-2016
描述 / Descriptions
TO-3P 塑封封装 肖特基二极管。
Schottky Barrier Diode in a TO-3P Plastic Package.
DATA SHEET
特征 / Features
低正向压降,低功耗损失,效率高。
Low forward voltage drop, low power losses, High efficiency operation.
用途 / Applications
用于高频率逆变器,开关电源,续流二极管,OR-ing 二极管,DC-DC 转换器和电池反向保护。
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode,
dc-to-dc converters and reverse battery protection.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
PIN1Anode PIN 2Cathode PIN 3Anode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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LV30200PT
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average forward current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance Junction to Ambient case
Operating and Storage Temperature Range
符号
Symbol
VRM
VRWM
VDC
VRMS
IF(AV)
IFSM
RθJc
Tj Tstg
DATA SHEET
数值
Rating
200
140
2×15
200
1.4
-40+150
单位
Unit
V
V
A
A
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min Typ Max Unit
Reverse Breakdown Voltage
VBR IR=1mA(Ta=25)
200
V
IF =5A(Ta=25)
0.73 0.85 V
IF =10A(Ta=25)
0.80 0.95 V
Forward Voltage
VF
IF =15A(Ta=25)
IF =5A(Ta=125)
0.92 1.15
0.58
V
V
IF =10A(Ta=125)
0.66 V
IF =15A(Ta=125)
0.71 0.85 V
Instantaneous Reverse current
(Note 1)
IRNote 1
VR=200V(Ta=25)
VR=200V(Ta=125)
4 20 μA
5 10 mA
注/Notes
1. 使用极短的测试时间,以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
2. 除非特别注明,数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a
single chip.
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LV30200PT
Rev.F Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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LV30200PT
Rev.F Mar.-2016
外形尺寸图 / Package Dimensions
DATA SHEET
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LV30200PT
Rev.F Mar.-2016
印章说明 / Marking Instructions
BR
LV30200PT
****
DATA SHEET
说明:
BR:   
LV30200PT: 
****:  
Note:
BR:  
LV30200PT:
****:
为公司代码
为产品型号
为生产批号代码,随生产批号变化。
Company Code.
Product Type.
Lot No. Code, code change with Lot No.
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