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LV10S60E
Rev.F May.-2016
描述 / Descriptions
TO-277 塑封封装 肖特基二极管。
TO-277 Plastic package Schottky diode .
DATA SHEET
特征 / Features
高正向浪涌能力,超低正向压降 VF(typ)=0.21V,优异的高温稳定性。
High Forward Surge Capability, Ultra Low Forward Voltage Drop VF(typ)=0.21V, Excellent High
Temperature Stability.
用途 / Applications
用于高频、低压、大电流整流二极管,续流二极管,保护二极管。
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1
3
2
PIN1Anode PIN 2Cathode PIN 3Anode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
Suggested Pad layout
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LV10S60E
Rev.F May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Peak Reverse Voltage
RMS Reverse voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Repetitive peak avalanche power
Junction Temperature Range
Storage Temperature Range
Typical Thermal Resistance
符号
Symbol
VRRM
VRWM
VRM
VR(RMS)
IO
IFSM
PARM
Tj MAX
Tstg
RθJANote 1
数值
Rating
60
42
10
250
30000
150
-55150
73
单位
Unit
V
V
A
A
W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Reverse Voltage
Forward Voltage
Instantaneous Reverse Current
注/Notes
符号
Symbol
VR
VF
IRNote 2
测试条件
Test Conditions
IR=0.3mA
IF=2A
TJ=25
IF=2A
TJ=125
IF=10A
TJ=25
IF=10A
TJ=125
VR=60V
TJ=25
VR=60V
TJ=100
VR=60V
TJ=125
最小值 典型值
Min Typ
60
0.34
0.21
0.44
0.42
80
6
30
最大值
Max
0.42
0.50
120
12
50
单位
Unit
V
V
V
V
V
uA
mA
mA
1.FR-4PCB,2盎司铜,最低建议焊盘布局。/FR-4 PCB, 2oz. Copper, minimum recommended pad
layout per.
2. 使用极短的测试时间,以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
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LV10S60E
Rev.F May.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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