LV10100E.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 LV10100E 데이타시트 다운로드

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LV10100E
Rev.F May.-2016
描述 / Descriptions
TO-277 塑封封装 肖特基二极管。
TO-277 Plastic package Schottky diode .
DATA SHEET
特征 / Features
高正向浪涌能力,超低正向压降,优异的高温稳定性。
High Forward Surge Capability, Ultra Low Forward Voltage Drop, Excellent High Temperature
Stability.
用途 / Applications
用于高频、低压、大电流整流二极管,续流二极管,保护二极管。
For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1
3
2
PIN1Anode PIN 2Cathode PIN 3Anode
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
Suggested Pad layout
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LV10100E
Rev.F May.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Peak Reverse Voltage
RMS Reverse voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Repetitive peak avalanche power
Junction Temperature Range
Storage Temperature Range
Typical Thermal Resistance
符号
Symbol
VRRM
VRWM
VRM
VR(RMS)
IO
IFSM
PARM
Tj MAX
Tstg
RθJANote 1
数值
Rating
100
78
10
150
20000
150
-55150
76
单位
Unit
V
V
A
A
W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Reverse Voltage
Forward voltage
Instantaneous Reverse
Current
注/Notes
符号
Symbol
测试条件
Test Conditions
VR IR=0.3mA
IF=2A
TJ=25
VF
IF=2A
IF=10A
TJ=125
TJ=25
IF=10A
TJ=125
IRNote 2
VR=100V
VR=100V
TJ=25
TJ=125
最小值
Min
100
典型值
Typ
0.43
0.33
0.62
0.57
15
10
最大值 单位
Max Unit
V
V
V
0.72 V
0.65 V
100 uA
25 mA
1.FR-4PCB,2盎司铜,最低建议焊盘布局。/FR-4 PCB, 2oz. Copper, minimum recommended pad
layout per.
2. 使用极短的测试时间,以尽量减少自热效应。/Short duration pulse test used to minimize self-heating
effect.
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LV10100E
Rev.F May.-2016
电参数曲线图 / Electrical Characteristic Curve
IF - TA
12
10
8
6
4
2
0
25 50 75 100 125 150 175
TC(℃)
10000
1000
100
10
1
1
DATA SHEET
CJ - VR
10
VR(V)
100
IF - VF
100
125℃
10
25℃
1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF(V)
1
100 IR - VR
10
1
0.1
0.01
0.001
0
10 20 30 40 50 60 70 80 90 100
VR(V)
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