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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX55 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26

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Philips Semiconductors
Voltage regulator diodes
Product specification
BZX55 series
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series: ±5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 40 W.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24 ±5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
APPLICATIONS
Low voltage stabilizers or voltage
references.
handbook, halfpage k
a
MAM239
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
IF continuous forward current
IZSM non-repetitive peak reverse current
Ptot total power dissipation
PZSM
non-repetitive peak reverse power
dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Tamb = 50 °C; note 1
Tamb = 50 °C; note 2
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
tp = 8.3 ms; square wave;
Tj 150 °C prior to surge
MIN. MAX.
250
see Table
“Per type”
400
500
40
30
65 +200
200
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature 50 °C; lead length 8 mm.
UNIT
mA
mW
mW
W
W
°C
°C
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
CONDITIONS
IF = 100 mA; see Fig.4
MIN.
MAX. UNIT
1.0 V
1996 Apr 26
2

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Per type
Tj = 25 °C; unless otherwise specified.
BZX55-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
MIN. MAX.
DIFFERENTIAL
RESISTANCE
rdif ()
at at
IZ IZtest
MAX. MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 5 and 6
TYP.
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
MAX.
REVERSE CURRENT at
REVERSE VOLTAGE
IR (µA)
at at
Tj = 25 °C Tj = 150 °C
MAX.
MAX.
VR
(V)
2V4 2.28 2.56 600 85
2V7 2.5 2.9 600 85
3V0 2.8 3.2 600 85
3V3 3.1 3.5 600 85
3V6 3.4 3.8 600 85
3V9 3.7 4.1 600 85
4V3 4.0 4.6 600 80
4V7 4.4 5.0 600 70
5V1 4.8 5.4 550 50
1.8
1.9
2.1
2.2
2.4
2.4
2.4
1.4
0.8
5 450 50 100 1.0
5
450 10
50 1.0
5 450 4 40 1.0
5 450 2 40 1.0
5 450 2 40 1.0
5 450 2 40 1.0
5 450 1 20 1.0
5 300 0.5 10 1.0
5 300 0.1 2 1.0
5V6 5.2 6.0 450 30
1.6
5 300 0.1 2 1.0
6V2 5.8 6.6 200 10
2.2
5 200 0.1 2 2.0
6V8
6.4 7.2
150
8
3.0
5 200 0.1 2 3.0
7V5 7.0 7.9 50 7
3.8
5 150 0.1 2 5.0
8V2 7.7 8.7 50 7
4.5
5 150 0.1 2 6.15
9V1 8.5 9.6 50 10
5.5
5 150 0.1 2 6.8
10
9.4 10.6
70 15
6.5
5 90 0.1 2 7.5
11
10.4 11.6
70 20
7.7
5 85 0.1 2 8.25
12
11.4 12.7
90 20
8.4
5 85 0.1 2 9.0
13
12.4 14.1
110 26
9.8
5 80 0.1 2 9.75
15
13.8 15.6
110 30
11.3
5 75 0.1 2 11.25
16 15.3 17.1 170 40
12.8
5 75 0.1 2 12.0
18 16.8 19.1 170 50
14.4
5 70 0.1 2 13.5
20 18.8 21.2 220 55
16.0
5 60 0.1 2 15.0
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5

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BZX55-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
MIN. MAX.
DIFFERENTIAL
RESISTANCE
rdif ()
at at
IZ IZtest
MAX. MAX.
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 5 and 6
TYP.
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
MAX.
REVERSE CURRENT at
REVERSE VOLTAGE
IR (µA)
at at
Tj = 25 °C Tj = 150 °C
MAX.
MAX.
VR
(V)
22 20.8 23.3 220 55
24 22.8 25.6 220 80
27 25.1 28.9 220 80
30 28.0 32.0 220 80
33 31.0 35.0 220 80
36 34.0 38.0 220 80
39 37.0 41.0 500 90
43 40.0 46.0 600 90
47
44.0 50.0
700 110
51
48.0 54.0
700 125
56 52.0 60.0 1000 135
62 58.0 66.0 1000 150
68 64.0 72.0 1000 200
75 70.0 79.0 1500 250
18.7
20.4
22.9
27.0
29.7
32.4
35.1
38.7
44.0
49.0
55.0
62.0
70.0
78.0
5 60 0.1 2 16.5
5 55 0.1 2 18.0
5 50 0.1 2 20.25
5 50 0.1 2 22.25
5 45 0.1 2 24.75
5 45 0.1 2 27.0
2.5 45
0.1 2 29.25
2.5 40
0.1 2 32.25
2.5 40
0.1 2 35.25
2.5 40
0.1 2 38.25
2.5 40
0.1 2 42.0
2.5 35
0.1 2 46.5
2.5 35
0.1 2 51.0
2.5 35
0.1 2 56.25
Note
1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA.
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
MAX.
1.25
1.25
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2

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Philips Semiconductors
Voltage regulator diodes
Product specification
BZX55 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 8 mm
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
300
380
Note
1. Device mounted on a printed circuit-board without metallization pad.
UNIT
K/W
K/W
GRAPHICAL DATA
handbook1, 0fu3ll pagewidth
Rth j-a
(K/W)
102
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
MBG930
0.02
0.01
10 0.001
tp
T
δ
=
tp
T
1
101
1
10 102 103 104 tp (ms) 105
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1996 Apr 26
5