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Z00607MA
Rev.E Mar.-2016
描述 / Descriptions
TO-92 塑封封装双向可控硅。Triac in a TO-92 Plastic Package.

特征 / Features
低控制极触发电流。
Low gate triggering current.
用途 / Applications
用于低功率交流转换。
For low power AC switching applications.
内部等效电路 / Equivalent Circuit
DATA SHEET
引脚排列 / Pinning
123
PIN1Main Terminal 2
PIN 2Gate
PIN 3Main Terminal 1
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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Z00607MA
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Non-repetitive peak on-state
current
I2t for fusing
Repetitive rate of rise of on-
state current after triggering
ITM=1A, IG=20mA,
dIG/dt=0.2A/μs
Peak gate current
Peak gate power
RMS on-state current
Repetitive peak off-state
voltages
Junction Temperature
Storage Temperature Range
符号
Symbol
ITSM
I2T
dIT/dt
IGM
PG(AV)
IT(RMS)
IT(RMS)
VDRM
VRRM
Tj
Tstg
测试条件
Test Conditions
F=50Hz
t=20ms
F=60Hz
t=16.7ms
Tp=10ms
T2+ G+
T2+ G-
T2- G-
T2- G+
tp=20μs
Tj=110
Tj=110
Tj=50
电性能参数 / Electrical Characteristics(Ta=25)
数值
Rating
9
10.0
0.32
50
50
50
10
1.0
0.1
0.8
1.0
600
-40125
-40150
单位
Unit
A
A
A2S
A/μs
A
W
A
A
V
参数
Parameter
Gate trigger current
Gate trigger voltage
On-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
符号
Symbol
测试条件
Test Conditions
IGT VD=12V RL=140
VGT
VGD
VD=VDRM RL=3.3K
Tj=110
IH(1) IT=200mA
IL
dV/dt(1)
(dV/dt)c(1)
IG=1.2IGT
VD=67%VDRM gate
open Tj=110
(dI/dt)c=0.35A/ms
Tj=110
信号区
Quadrant
I-II-III
IV
ALL
最小值 典型值 最大值 单位
Min Typ Max Unit
5.0
7.0
mA
1.5 V
ALL 0.2
V
I-III-IV
II
5.0 mA
10 mA
20 mA
10 V/μs
1.5 V/μs
Note1for either polarity of electrode A2 voltage with reference to electrode A1
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Z00607MA
Rev.E Mar.-2016
静态参数    /    Static characteristics
DATA SHEET
参数
Parameter
Gate trigger voltage
Repetitive peak off-state
current
符号
Symbol
VTM
IDRM
IRRM
测试条件
Test Conditions
ITM=1.1A tp=380μs
Tj=25
VDRM=VRRM
Tj=25
Tj=110
最小值 典型值 最大值
Min Typ Max
1.5
10
0.1
单位
Unit
V
μA
mA
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