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2SA562M(3CG562M)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于音频小功率放大,激励级放大及开关电路。
Purpose: Audio frequency low power amplifier, driver stage amplifier, switching applications.
特点:极好的 hFE 特性,与 2SC1959M(3DG1959M)互补。
Features: Excellent hFE linearity, complementary pair with 2SC1959M(3DG1959M).
极限参数/Absolute Maximum Ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO -35 V
VCEO -30 V
VEBO
-5.0
V
IC
-500
mA
IB
-100
mA
PC 400 mW
Tj 150 ℃
Tstg -55~150 ℃
电性能参数/Electrical Characteristics(Ta=25℃)
参数符号
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
测试条件
Test Condition
VCB=-35V
VEB=-5.0V
VCE=-1.0V
VCE=-6.0V
IC=-100mA
VCE=-1.0V
VCE=-6.0V
VCB=-6.0V
IE=0
IC=0
IC=-100mA
IC=-400mA
IB=-10mA
IC=-100mA
IC=-20mA
IE=0 f=1.0MHz
最小值
Min
70
25
h 分档/FE(1)
hFE(1)
classifications:
hFE(1)分档
hFE(1) Classifications
hFE(1)范围
hFE(1) Range
印章
Marking
O
70~140
HVAO
数值
Rating
典型值
Typ
最大值
Max
-0.1
-0.1
240
单位
Unit
μA
μA
-0.1
-0.8
200
13
-0.25
-1.0
V
V
MHz
pF
Y
120~240
HVAY
http://www.lzg.so

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2SA562M(3CG562M)
http://www.lzg.so