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2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
September 2009
1 TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5.0 V
IC Collector current
- Continuous
-500
mA
TJ, TSTG Operating and Storage Junction Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
1
www.fairchildsemi.com

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Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
VCBO Collector-Base Breakdown Voltage IC = -10μA, IE = 0
VCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0
VEBO Emitter-Base Breakdown Voltage IE = -10μA, IC = 0
ICBO Collector Cut-off Current
VCB = -60V, IE = 0
IEBO Emitter Cut-off Current
VEB = -5V, IC = 0
On Characteristics
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics
VCE = -6V, IC = -1mA
IC = -100mA, IB = -10mA
VCE = -6V, IC = -1mA
fT Current Gain Bandwidth Product
Cob Output Capacitance
VCE = -6V, IC = -10mA
VCB = -10V, IE = 0
f = 1.0MHz
NF Noise Figure
VCE = -6V, IC = -0.3mA
RG = 10kΩ, f = 100Hz
* Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%
Min.
-60
-50
-5.0
90
-15
-580
50
Typ.
Max. Units
-100
-100
V
V
V
nA
nA
600
-300
-680
mV
mV
MHz
6 pF
20 dB
hFE Classification
Classification
hFE
R
90 ~ 180
Q
135 ~ 270
P
200 ~ 400
K
300 ~ 600
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
2
www.fairchildsemi.com

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Physical Dimension
TO-92
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
3
Dimensions in Millimeters
www.fairchildsemi.com

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Definition
Datasheet contains the design specifications for product development. Specifications may change in
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The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com