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ST 2SA733
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y,
P and L, according to its DC current gain. As
complementary type the NPN transistor ST 2SC945
is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
G S P FORM A IS AVAILABLE
Value
60
50
5
150
250
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
РАДИОТЕХ
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®

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ST 2SA733
Characteristics at Tamb=25 oC
DC Current Gain
at -VCE=6V, -IC=1mA
Current Gain Group R
O
Y
P
L
Collector Base Breakdown Voltage
at -IC=100µA
Collector Emitter Breakdown Voltage
at -IC=10mA
Emitter Base Breakdown Voltage
at -IE=10µA
Collector Cutoff Current
at -VCB=60V
Emitter Cutoff Current
at -VEB=5V
Collector Saturation Voltage
at -IC=100mA, -IB=10mA
Base Emitter Voltage
at -VCE=6V, -IC=1mA
Gain Bandwidth Product
at -VCE=6V, -IC=10mA
Output Capacitance
at -VCB=10V, f=1MHz
Noise Figure
at -VCE=6V, -IC=0.3mA
at f=100Hz, RS=10K
Symbol
hFE
hFE
hFE
hFE
hFE
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-ICBO
-IEBO
-VCE(sat)
-VBE(on)
fT
COB
F
Min.
40
70
120
200
350
60
50
5
-
-
-
0.5
50
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
0.18
0.62
180
2.8
6
Max.
Unit
80 -
140 -
240 -
400 -
700 -
-V
-V
-V
0.1 µA
0.1 µA
0.3 V
0.8 V
- MHz
- pF
20 dB
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/07/2002

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ST 2SA733
Total power dissipation
vs. ambient temperature
300
Free air
250
200
150
100
50
0 25 50 75 100 125 150
Tamb ( C)
-100
-80
-60
-40
-20
Collector current vs.
collector emitter voltage
-2.0 -1.8 -1.6-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
I B=-0.2mA
0
0 -0.2 -0.4 -0.6 -0.8 -1.0
VCE, V
1000
100
hFE - I C
VCE=-6V
-1V
-200
-100
I C - VBE
VCE=-6V
Ta=75 C
-10 50 C
25 C
0C
-1 -25 C
-0.1
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1
VBE, V
Collector current vs.
collector emitter voltage
-10
-45
-8 -40 -35
-30
-6 -25
-4 -20
-15
-10
-2
0 IB=-5 A
0 -10 -20 -30 -40 -50
VCE, V
1000
hFE - I C
Ta=75 C 50 C
100
25 C
0 C -25 C
VCE=-6V
10
-0.1
-1
I C, mA
-10
-100
10
-0.1
-1
I C, mA
-10
-100
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/07/2002

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ST 2SA733
VCE(sat), VBE(sat) - IC
-1
VBE(sat)
-0.1
VCE(sat)
fT - IE
500
VCE= -6V
-1V
100
IC/IB=10
-0.01
-1
-10
I C, mA
-100
Normalized h-parameters
vs. collector emitter voltage
100
VCE=-6V, IE=1mA, f=1kHz
hie=5.5k , hre=7.5x10 -4
hfe=20s, hoe=28 s
10
hoe
1
hre
hfe
hie
hie hfe
hre
hoe
0.1
-0.1
-1 -10
VCE, V
100
f=1MHz
Cob - VCB
-100
IC/IB=10
10
1
10
I E, mA
100
Normalized h-parameters
vs. emitter current
100
VCE=-6V, IE=1mA, f=1kHz
hie=5.5k , hre=7.5x10 -4
hfe=20s, hoe=28 s
10
hie
hoe
hre
1 hfe
hoe
hfe
0.1
0.1
hie
1 10
IE, mA
hre
100
10
1
-1 -10
-100
VCB, V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/07/2002