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SHENZHEN MING YUE MICRO-ELECTRONICS CO., LTD
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY AMPLIFIER
* Complement to 2SC945
* Collector-Base Voltage VCBO=-60v
2SA733
PNP EPITAXIAL SILICON TRANSISTOR
Package: TO-92
ABSOLUTE MAXIMUM RATINGS at Tamb=250C
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo -60
Collector-Emitter Voltage
Vceo -50
Emitter-Base Voltage
Vebo
-5
Collector Current
Ic -100
Base Current
Ib -20
Collector Dissipation
Pc 250
Junction Temperature
Tj 150
Storage Temperature
Tstg -55 ~150
Unit
V
V
V
mA
mA
mW
0C
0C
PIN:
STYLE
1
23
NO.1
E
C
B
ELECTRICAL CHARACTERISTICS at Tamb=250C
Characteristic
Symbol Min Typ
Collector-Base Breakdown Voltage
BVcbo -60
Collector-Emitter Breakdown Voltage BVceo -50
Emitter-Base Breakdown Voltage
BVebo -5
Collector Cutoff Current
Icbo
Emitter Cutoff Current
Iebo
DC Current Gain
Hfe 40
Collector-Emitter Saturation Voltage Vce(sat)
-0.18
Base-Emitter On Voltage
Vbe(on) -0.58 -0.62
Output Capacitance
Cob 4.5
Current Gain-Bandwidth Product
fT 50 180
Noise Figure
NF 6
Max
-100
-100
700
-0.3
-0.68
6
20
Unit
V
V
V
nA
nA
V
V
pF
MHz
dB
Test Conditions
Ic=-100uA Ie=0
Ic=-1mA Ib=0
Ie=-100uA Ic=0
Vcb=-60V Ie=0
Veb=-5V Ic=0
Vce=-6V Ic=-1mA
Ic=-100mA Ib=-10mA
Vce=-6V Ic=-1mA
Vcb=-10V f=1MHz
Vce=-6V Ic=-10mA
Ic=-0.3mA Vce=-6v
Rg=10Kohm f=100Hz
CLASSIFICATION HFE
Classification
R
Hfe 40-80
O YGL
70-140 120-240 200-400 350-700