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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA733
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
applicatioms.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
-60
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -100
Base Current
IB -20
Total Power Dissipation
PD 250
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Voltage
BVCBO -60
-
Collector-Emitter Breakdown Volatge
Emitter-Base Breakdown Volatge
BVCEO
BVEBO
-50
-5
-
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
-
-
-0.18
Base-Emitter On Voltage
DC Current Gain(1)
Transition Frequency
VBE(on)
hFE
fT
-0.55
90
100
-0.62
200
180
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
4.5
Max
-
-
-
-0.1
-0.1
-0.3
-0.7
600
-
6
Classification of hFE
Rank
R
Range
90~180
Q
135~270
P
200~400
K
300~600
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IE=-1mA, IB=0
IE=-10µA, IC=0
VCB=-60V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-1mA, VCE=-6V
IC=-1mA, VCE=-6V
IC=-10mA, VCE=-6V
VCB=-10V, IE=0, f=1MHz