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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
Capable of 0.25Watts of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage 60V
Operating and storage junction temperature range: -55OC to +150OC
2SA733
PNP Silicon
Plastic-Encapsulate
Transistor
Pin Configuration
Bottom View
EC B
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Typ Max Units
V (BR)CEO Collector-Emitter Breakdown Voltage 50 --- ---
Vdc
(I C=1.0mAdc, IB=0)
V (BR)CBO Collector-Base Breakdown Voltage
60 --- --- Vdc
(I C=5.0uAdc, IE=0)
V (BR)EBO Emitter-Base Breakdown Voltage
5.0 --- --- Vdc
(I E=50uAdc, IC=0)
ICBO Collector Cutoff Current
--- --- 0.1 uAdc
(V CB=60Vdc, IE=0)
IEBO Emitter Cutoff Current
--- --- 0.1 uAdc
(V EB=5.0Vdc, IC=0)
ON CHARACTERISTICS
h FE DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc)
V CE(sat)
Collector-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc)
SMALL-SIGNAL CHARACTERISTICS
90 200 600 ---
--- 0.18 0.3 Vdc
fT Transistor Frequency
(I C=10mAdc, VCE=6.0Vdc
f=30MHz)
100 180 ---
MHz
CLASSIFICATION OF HFE (1)
Rank
R
Range
90-180
Q
135-270
P
200-400
K
300-600
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .170 .190
B .170 .190
C .550 .590
D .010 .020
E .130 .160
G .010 .104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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