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YBS3004G - YBS3007G
Taiwan Semiconductor
3A, 400V - 1000V Glass Passivated Bridge Rectifier
FEATURES
Glass passivated junction
Ideal for automated placement
Reliable low cost construction utilizing molded
plastic technique
High surge current capability
UL Recognized File # E-326854
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV)
VRRM
IFSM
TJ MAX
Package
3
400 - 1000
110
150
YBS
A
V
A
°C
Configuration
Quad
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
Case: YBS
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 0.22g (approximately)
YBS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
YBS
YBS
3004G 3005G
YBS
3006G
Marking code on the device
YBS
3004G
YBS
3005G
YBS
3006G
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
Surge peak forward current, 8.3 ms single
half sine-wave superimposed on rated load
Surge peak forward current, 1 ms single
half sine-wave superimposed on rated load
I2t value (of a surge on-state current)(1)
VRRM
VR(RMS)
IF(AV)
25°C
IFSM 125°C
25°C
IFSM 125°C
I2t
400
280
600 800
420 560
3
110
88
220
175
50
Junction temperature
Storage temperature
Note:
1. Pulse test with PW=8.3 ms single half sine-wave
TJ
TSTG
-55 to +150
-55 to +150
YBS
3007G
YBS
3007G
1000
700
UNIT
V
V
A
A
A
A2s
°C
°C
1 Version:B1703

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YBS3004G - YBS3007G
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
Junction-to-lead thermal resistance
RӨJL
25
Junction-to-ambient thermal resistance
RӨJA
80
Junction-to-case thermal resistance
RӨJC
28
Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu pad test board)
UNIT
°C/W
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
IF = 1.5A, TJ = 25°C
Forward voltage per diode (1)
IF = 3.0A, TJ = 25°C
IF = 1.5A, TJ = 125°C
VF
IF = 3.0A, TJ = 125°C
Reverse current @ rated VR per diode (2)
TJ = 25°C
TJ = 125°C
IR
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
1 MHz, VR=4.0V
CJ
TYP
0.89
0.93
0.76
0.82
-
-
33
MAX
1.02
1.10
0.90
1.00
5
100
-
UNIT
V
V
V
V
µA
µA
pF
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
YBS30xxG
(Note 1, 2)
RA
G
YBS
Notes:
1. "xx" defines voltage from 400V (YBS3004G) to 1000V (YBS3007G)
2. Whole series with green compound (halogen-free)
PACKING
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
PART NO.
YBS3007G RAG YBS3007G
PACKING CODE
RA
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2 Version:B1703

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YBS3004G - YBS3007G
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
4
Fig2. Typical Junction Capacitance
1000
3
2
1
Resistive or
inductive load
with heat sink
0
0 30
60
90 120
LEAD TEMPERATURE (°C)
100
10
f=1.0MHz
Vsig=50mVp-p
1
150 1
10
REVERSE VOLTAGE (V)
100
Fig3. Typical Reverse Characteristics
100.00
Fig4. Typical Forward Characteristics
100
10.00
1.00
0.10
TJ=125°C
TJ=25°C
10
1
0.01
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.1
0.40
TJ=125°C
TJ=25°C
Pulse width 300μs
1% duty cycle
0.60
0.80
1.00
1.20
FORWARD VOLTAGE (V)
1.40
3 Version:B1703