8050MG.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 8050MG 데이타시트 다운로드

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8050MG
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.

特征 / Features
与 8550MG 互补。无卤产品。
Complementary pair with 8550MG.HF Product.

用途 / Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2
1
PIN1Emitter
PIN 2Base PIN 3Collector
放大及印章代码 / hFE Classifications & Marking
hFE Classifications
Symbol
hFE Range
B
85160
C
120200
Marking
GY1B
GY1C
D
160300
GY1D
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8050MG
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
40
25
6.0
1.5
0.5
625
150
-55150
单位
Unit
V
V
V
A
A
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
测试条件
Test Conditions
VCBO IC=0.1mA IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
40 V
VCEO IC=2.0mA IB=0
25
V
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
VBE
fT
Cob
IE=0.1mA
VCB=35V
VEB=6.0V
VCE=1.0V
VCE=1.0V
VCE=1.0V
IC=800mA
IC=800mA
VCE=1.0V
VCE=10V
VCB=10V
f=1.0MHz
IC=0
IE=0
IC=0
IC=100mA
IC=800mA
IC=5.0mA
IB=80mA
IB=80mA
IC=10mA
IC=50mA
IE=0
6.0
85
40
45
100
0.28
0.98
0.66
190
9.0
V
0.1 μA
0.1 μA
300
0.5 V
1.2 V
1.0 V
MHz
pF
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8050MG
Rev.E Mar.-2016
电参数曲线图 / Electrical Characteristic Curve
DATA SHEET
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