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Date:- 12 Aug, 2003
Data Sheet Issue:- 1
Fast Turn-off Thyristor
Type P0128SH10# to P0128SH12#
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
IT(AVM)
IT(AVM)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tcase=55°C, (note 2)
Maximum average on-state current. Tcase=85°C, (note 2)
Nominal RMS on-state current, Tcase=25°C, (note 2)
D.C. on-state current, Tcase=25°C
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 3)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 3)
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 3)
I2t capacity for fusing tp=10ms, Vrm10V, (note 3)
Critical rate of rise of on-state current (repetitive), (Note 4)
Critical rate of rise of on-state current (non-repetitive), (Note 4)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Single phase; 50Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tj initial.
4) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
1000-1200
1000-1200
1000-1200
1100-1300
UNITS
V
V
V
V
MAXIMUM
LIMITS
128
83
260
206
1700
1950
19000
13700
500
1000
5
1.5
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 1 of 12
August, 2003

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WESTCODE An IXYS Company
Characteristics
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
PARAMETER
VTM
VTM
VT0
rT
(dv/dt)cr
IDRM
IRRM
VGT
IGT
VGD
IH
tgd
tgt
Qrr
Qra
Irm
trr
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
tq Turn-off time (note 2)
RthJ-C
RthJ-K
F
Wt
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Mounting torque
Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
10
20
-
-
11.5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 2.30 ITM=280A
- 2.60 ITM=384A
- 1.60
V
V
V
- 2.49
m
- - VD=80% VDRM, Linear ramp, Gate o/c
- 20 Rated VDRM
- 20 Rated VRRM
V/µs
mA
mA
- 3.0
- 200 Tj=25°C
VD=10V, IT=3A
V
mA
- 0.25 Rated VDRM
V
- 600 Tj=25°C
mA
0.4 1.0 VD=67% VDRM, ITM=500A, di/dt=10A/µs,
0.8 2.0 IFG=2A, tr=0.5µs, Tj=25°C
µs
50 -
µC
25 45
µC
15
- ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V
A
3.0 -
µs
-
-
15
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
25
ITM=100A, tp=500µs, di/dt=10A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.23 DC
K/W
- 0.08 DC
K/W
- 14.5
Nm
130 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 2 of 12
August, 2003

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WESTCODE An IXYS Company
Distributed Gate Thyristor types P0128SH10# to P0128SH12#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
10
12
VDRM VDSM VRRM
V
1000
1200
VRSM
V
1100
1300
VD VR
DC V
700
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Type P0128SH10# to P0128SH12# Issue 1
Page 3 of 12
August, 2003